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BF909A

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF909AR

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF909AWR

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF909R

N-channeldualgateMOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES ?Sp

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF909R

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF909R

N-channeldualgateMOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES ?Sp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF909WR

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF909WR

N-channeldual-gateMOS-FET

DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT343Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES ?Speciallyde

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BLV909

UHFpowertransistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorinan8-leadSOT409BSMDpackagewithaceramiccap.Allleadsareisolatedfromthemountingbase. FEATURES ?Emitterballastingresistorsforoptimumtemperatureprofile ?Goldmetallizationensuresexcellentreliability ?Internalinputm

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

CD909

NPNPLASTICPOWERTRANSISTOR

NPNPLASTICPOWERTRANSISTOR PowerLinearandSwitchingApplications

CDIL

Continental Device India Limited

詳細(xì)參數(shù)

  • 型號:

    T-909

  • 制造商:

    RHOMBUS-IND

  • 制造商全稱:

    Rhombus Industries Inc.

  • 功能描述:

    DDS Application Pulse Transformer

供應(yīng)商型號品牌批號封裝庫存備注價格
PULIZZI
16
全新原裝 貨期兩周
詢價
EUPEC
專業(yè)模塊
MODULE
8513
模塊原裝主營-可開原型號增稅票
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EUPEC
24+
MODULE
2100
公司大量全新現(xiàn)貨 隨時可以發(fā)貨
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EUPEC
2022+
平板可控硅MODULE
1500
長期供應(yīng),價格優(yōu)勢,全新原裝,支持實單,
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Infineon
23+
標(biāo)準(zhǔn)封裝
5000
原廠授權(quán)一級代理 IGBT模塊 可控硅 晶閘管 熔斷器質(zhì)保
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Infineon
23+
Tray
500
原裝正品
詢價
INFINEON
24+
MODULE
1000
全新原裝現(xiàn)貨
詢價
INFINEON/英飛凌
2023+
module
48000
AI智能識別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站
詢價
INFINEON
23+
8000
只做原裝現(xiàn)貨
詢價
INFINEON
23+
7000
詢價
更多T-909供應(yīng)商 更新時間2025-4-16 16:06:00