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TRF1213

TRF1213Near-DCto>14GHz,3dB-Bandwidth,Single-Ended-to-DifferentialRFAmplifier

1Features ?Single-endedinput,differentialoutput ?ExcellentperformancedrivingRFADCs ?Fixed14dBgain ?Bandwidth(3dB):>14GHz ?Gainflatness: –+1.2dB(12GHz) ––1dB(14.8GHz) ?OP1dB: –4GHz:14.4dBm –10GHz:14.6dBm ?OIP3: –4GHz:34dBm –10GHz:31dBm ?NF: –4GHz:8.

TI1Texas Instruments

德州儀器

TRF1213RPVR

TRF1213Near-DCto>14GHz,3dB-Bandwidth,Single-Ended-to-DifferentialRFAmplifier

1Features ?Single-endedinput,differentialoutput ?ExcellentperformancedrivingRFADCs ?Fixed14dBgain ?Bandwidth(3dB):>14GHz ?Gainflatness: –+1.2dB(12GHz) ––1dB(14.8GHz) ?OP1dB: –4GHz:14.4dBm –10GHz:14.6dBm ?OIP3: –4GHz:34dBm –10GHz:31dBm ?NF: –4GHz:8.

TI1Texas Instruments

德州儀器

TVA1213

AluminumCapacitors85C,Miniature,AxialLead

FEATURES ?Lowleakagecurrent ?Longshelflife ?IdealforapplicationinTVsets,autoradios,radio-phonecombinations,electronictestingequipment ?Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

TZ1213A

CrystalUnitSMD2.5x2.032MHz

Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount2.5mmx2.0mmcrystalunitforuseinwirelesscommunicationsdevices, especiallyforan

TAI-SAW

TAI-SAW TECHNOLOGY CO., LTD.

U1213A

ForElectronic,ElectricalandIndustrialProcessTesting

Features ––Extendedmeasurementdistanceofupto100meters ––Viewreadingsofuptofourhandheldmeterssimultaneously ––CompatibleacrossallexistingKeysightU1200serieshandheldmeters ––60,000pointsintervallogging* ––DownloadloggeddatatoaPCviaBluetoothconnection* ––Micro

KEYSIGHTKeysight Technologies

是德科技是德科技（中國）有限公司

UN1213

SiliconNPNepitaxialplanertransistor

SiliconNPNepitaxialplanartype Fordigitalcircuits ■Features ?Costscanbereducedthroughdownsizingoftheequipmentand reductionofthenumberofparts ?Mtypepackageallowingeasyautomaticandmanualinsertionas wellasstand-alonefixingtotheprintedcircuitboard

PanasonicPanasonic Semiconductor

松下松下電器

UN1213

SiliconNPNepitaxialplanartype

SiliconNPNepitaxialplanartype Fordigitalcircuits ■Features ?Costscanbereducedthroughdownsizingoftheequipmentand reductionofthenumberofparts ?Mtypepackageallowingeasyautomaticandmanualinsertionas wellasstand-alonefixingtotheprintedcircuitboard

PanasonicPanasonic Semiconductor

松下松下電器

UNR1213

SiliconNPNepitaxialplanartype

SiliconNPNepitaxialplanartype Fordigitalcircuits ■Features ?Costscanbereducedthroughdownsizingoftheequipmentand reductionofthenumberofparts ?Mtypepackageallowingeasyautomaticandmanualinsertionas wellasstand-alonefixingtotheprintedcircuitboard

PanasonicPanasonic Semiconductor

松下松下電器

UPC1213C

AUDIOPOWERAMPLIFIER

DESCRIPTION TheμPC1213Cisasiliconmonolithicintegratedcircuitdesignedforanaudiopoweramplifierusedinaportableradioreceiveroraportablecassettetaperecorderwhichworksat9-voltpowersupply. TheμPC1213Cisencapsulatedina8-pindualin-lineprasticpackagewithatab.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

WCT1213DS

MWCT1213VLH/AVLH/VLLDS

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

晶體管資料

  • 型號(hào)：

    T1213MH

  • 別名：

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家：

  • 制作材料：

    Triac

  • 性質(zhì)：

  • 封裝形式：

    直插封裝

  • 極限工作電壓：

    600V

  • 最大電流允許值：

    12A

  • 最大工作頻率：

    <1MHZ或未知

  • 引腳數(shù)：

    3

  • 可代換的型號(hào)：

    BT138/…,TAG255-…,TAG256-…,

  • 最大耗散功率：

  • 放大倍數(shù)：

  • 圖片代號(hào)：

    B-10

  • vtest：

    600

  • htest：

    999900

  • atest：

    12

  • wtest：

    0

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
ST
19+
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13000
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TAG
05+
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100
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24+
3000
自己現(xiàn)貨
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17+
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6200
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ST
24+
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1000
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20+
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38560
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50000
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50000
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20
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20000
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更多T1213MH供應(yīng)商 更新時(shí)間2025-5-4 16:04:00

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