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T1G6000528-Q3-EVB3中文資料TriQuint數據手冊PDF規(guī)格書

T1G6000528-Q3-EVB3
廠商型號

T1G6000528-Q3-EVB3

功能描述

7W, 28V, DC ??6 GHz, GaN RF Power Transistor

文件大小

1.62959 Mbytes

頁面數量

16

生產廠商 TriQuint Semiconductor
企業(yè)簡稱

TriQuint

中文名稱

TriQuint Semiconductor官網

原廠標識
數據手冊

下載地址一下載地址二到原廠下載

更新時間

2025-2-5 10:50:00

T1G6000528-Q3-EVB3規(guī)格書詳情

General Description

The TriQuint T1G6000528-Q3 is a 7 W (P 3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz and typically provides >10 dB gain at 6 GHz. The device is constructed with TriQuint’s proven 0.25 μm production process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

Product Features

? Frequency: DC to 6 GHz

? Linear Gain: >10 dB at 6 GHz

? Operating Voltage: 28 V

? Output Power (P3dB): >7 W at 6 GHz

? Lead-free and RoHS compliant

? Low thermal resistance package

Applications

? Wideband and narrowband defense and commercial communication systems

– General Purpose RF Power

– Jammers

– Radar

– Professional radio systems

– WiMAX

– Wideband amplifiers

– Test instrumentation

– Cellular infrastructure

產品屬性

  • 型號:

    T1G6000528-Q3-EVB3

  • 功能描述:

    射頻MOSFET電源晶體管 3.0-3.5GHz Eval Board

  • RoHS:

  • 制造商:

    Freescale Semiconductor

  • 配置:

    Single

  • 頻率:

    1800 MHz to 2000 MHz

  • 增益:

    27 dB

  • 輸出功率:

    100 W

  • 封裝/箱體:

    NI-780-4

  • 封裝:

    Tray

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