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T35L3232B-4T

32K x 32 SRAM

GENERALDESCRIPTION TheTaiwanMemoryTechnologySynchronousBurstRAMfamilyemployshigh-speed,lowpowerCMOSdesignusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohighvaluedresistors. FEATURES ?VFTpinforus

TMTTaiwan Memory Technology

凱鈺科技凱鈺科技股份有限公司

T35L6432A

64K x 32 SRAM?

GENERALDESCRIPTION TheTaiwanMemoryTechnologySynchronousBurstRAMfamilyemploys:high-speed,lowpowerCMOSdesignusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohighvaluedresistors. FEATURES ■FastA

TMTTaiwan Memory Technology

凱鈺科技凱鈺科技股份有限公司

T35L6432A-5Q

64K x 32 SRAM?

GENERALDESCRIPTION TheTaiwanMemoryTechnologySynchronousBurstRAMfamilyemploys:high-speed,lowpowerCMOSdesignusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohighvaluedresistors. FEATURES ■FastA

TMTTaiwan Memory Technology

凱鈺科技凱鈺科技股份有限公司

T35L6432A-5T

64K x 32 SRAM?

GENERALDESCRIPTION TheTaiwanMemoryTechnologySynchronousBurstRAMfamilyemploys:high-speed,lowpowerCMOSdesignusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohighvaluedresistors. FEATURES ■FastA

TMTTaiwan Memory Technology

凱鈺科技凱鈺科技股份有限公司

T35L6432B

64K x 32 SRAM???

GENERALDESCRIPTION TheTaiwanMemoryTechnologySynchronousBurstRAMfamilyemployshigh-speed,lowpowerCMOSdesignusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohighvaluedresistors. TheT35L6432BSRAMinte

TMTTaiwan Memory Technology

凱鈺科技凱鈺科技股份有限公司

T35L6432B-10Q

64K x 32 SRAM???

GENERALDESCRIPTION TheTaiwanMemoryTechnologySynchronousBurstRAMfamilyemployshigh-speed,lowpowerCMOSdesignusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohighvaluedresistors. TheT35L6432BSRAMinte

TMTTaiwan Memory Technology

凱鈺科技凱鈺科技股份有限公司

T35L6432B-12T

64K x 32 SRAM???

GENERALDESCRIPTION TheTaiwanMemoryTechnologySynchronousBurstRAMfamilyemployshigh-speed,lowpowerCMOSdesignusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohighvaluedresistors. TheT35L6432BSRAMinte

TMTTaiwan Memory Technology

凱鈺科技凱鈺科技股份有限公司

T35L6464A

64K x 64 SRAM???

GENERALDESCRIPTION TheTaiwanMemoryTechnologySynchronousBurstRAMfamilyemploys:high-speed,lowpowerCMOSdesignusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohighvaluedresistors. FEATURES ?FastAccessti

TMTTaiwan Memory Technology

凱鈺科技凱鈺科技股份有限公司

T35L6464A-5L

64K x 64 SRAM???

GENERALDESCRIPTION TheTaiwanMemoryTechnologySynchronousBurstRAMfamilyemploys:high-speed,lowpowerCMOSdesignusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohighvaluedresistors. FEATURES ?FastAccessti

TMTTaiwan Memory Technology

凱鈺科技凱鈺科技股份有限公司

T35L6464A-5Q

64K x 64 SRAM???

GENERALDESCRIPTION TheTaiwanMemoryTechnologySynchronousBurstRAMfamilyemploys:high-speed,lowpowerCMOSdesignusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohighvaluedresistors. FEATURES ?FastAccessti

TMTTaiwan Memory Technology

凱鈺科技凱鈺科技股份有限公司

詳細參數(shù)

  • 型號：

    T35

  • 制造商：

    Enhance Technology

  • 功能描述：

    STORPACK, 3X5.25" FOR 5X3.5 - Bulk

供應(yīng)商型號品牌批號封裝庫存備注價格
EPCOS
23+
NA
39960
只做進口原裝,終端工廠免費送樣
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Grasslin by Intermatic
2022+
1
全新原裝 貨期兩周
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24+
SMD
750
本站現(xiàn)庫存
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XR
23+
SOP24
7750
全新原裝優(yōu)勢
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ApexToolGroup/CooperTool
新
5
全新原裝 貨期兩周
 詢價
TOSHIBA
2016+
SMD
6000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價
TMTECH
23+
QFP
5000
原裝正品,假一罰十
 詢價
TMTECH
21+
QFP
12588
全新原裝深圳現(xiàn)貨
 詢價
KMT
05+
原廠原裝
3051
只做全新原裝真實現(xiàn)貨供應(yīng)
 詢價
TMTECH
22+
QFP128
5000
原裝現(xiàn)貨庫存.價格優(yōu)勢
 詢價
更多T35供應(yīng)商 更新時間2025-4-22 18:05:00

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