T431616E中文資料凱鈺科技數(shù)據(jù)手冊PDF規(guī)格書

GRNERAL DESCRIPTION

The T431616D/E SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized as 2048 rows by 256 columns by 16 bits. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.

FEATURES

Fast access time: 5/6/7 ns

? Fast clock rate: 200/166/143 MHz

? Self refresh mode: standard and low power

? Internal pipelined architecture

? 512K word x 16-bit x 2-bank

? Programmable Mode registers

- CAS# Latency: 1, 2, or 3

- Burst Length: 1, 2, 4, 8, or full page

- Burst Type: interleaved or linear burst

- Burst stop function

? Individual byte controlled by LDQM and UDQM

? Auto Refresh and Self Refresh

? 4096 refresh cycles/64ms

? CKE power down mode

? JEDEC standard +3.3V±0.3V power supply

? Interface: LVTTL

? 50-pin 400 mil plastic TSOP II package

? 60-ball, 6.4x10.1mm VFBGA package

? Lead Free Package available for both TSOP II and VFBGA

?Low Operating Current for T431616E