零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
Tmax Molded Case Circuit Breakers | ABBabb ABB集團(tuán)ABB(中國)有限公司 | ABB | ||
Tmax Molded Case Circuit Breakers | ABBabb ABB集團(tuán)ABB(中國)有限公司 | ABB | ||
Tmax Molded Case Circuit Breakers | ABBabb ABB集團(tuán)ABB(中國)有限公司 | ABB | ||
N??hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS200V RDSON(MAX.)140mΩ ID15A UIS,100Tested Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
200VN-ChannelMOSFET Features ?3.6A,200V,RDS(on)=1.4?@VGS=10V ?Lowgatecharge(typical5.0nC) ?LowCrss(typical5.0pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features ?3.8A,200V,RDS(on)=1.35?@VGS=10V ?Lowgatecharge(typical4.0nC) ?LowCrss(typical6.0pF) ?Fastswit | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelQFETMOSFET200V,3.0A,1.4 Features ?3.0A,200V,RDS(on)=1.4?(Max.)@VGS=10V ?Lowgatecharge(Typ.5.0nC) ?LowCrss(Typ.5.0pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
200VN-ChannelMOSFET Features ?3.0A,200V,RDS(on)=1.4?(Max.)@VGS=10V ?Lowgatecharge(Typ.5.0nC) ?LowCrss(Typ.5.0pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
200VLOGICN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
200VLOGICN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
N-ChannelQFETMOSFET200V,3.0A,1.4 Features ?3.0A,200V,RDS(on)=1.4?(Max.)@VGS=10V ?Lowgatecharge(Typ.5.0nC) ?LowCrss(Typ.5.0pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
200VN-ChannelMOSFET Features ?3.6A,200V,RDS(on)=1.4?@VGS=10V ?Lowgatecharge(typical5.0nC) ?LowCrss(typical5.0pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features ?3.8A,200V,RDS(on)=1.35?@VGS=10V ?Lowgatecharge(typical4.0nC) ?LowCrss(typical6.0pF) ?Fastswit | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
N-Channel200V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3.6A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
200VN-ChannelMOSFET Features ?3.6A,200V,RDS(on)=1.4?@VGS=10V ?Lowgatecharge(typical5.0nC) ?LowCrss(typical5.0pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ON |
2023+ |
0052+ |
80000 |
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品 |
詢價(jià) | ||
ABB |
22+ |
SMD |
518000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
ON |
2018+ |
TO263 |
6528 |
只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫存放心 |
詢價(jià) | ||
A |
23+ |
TO-220 |
公司只做原裝正品 |
詢價(jià) | |||
A |
TO-220 |
22+ |
6000 |
十年配單,只做原裝 |
詢價(jià) | ||
AO/萬代 |
TO-220 |
6892 |
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長期供貨 |
詢價(jià) | |||
A |
22+ |
TO-220 |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價(jià) | ||
ON/安森美 |
23+ |
TO-263 |
11200 |
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO |
詢價(jià) | ||
ELATEC RFID Systems |
23+ |
TO-18 |
12800 |
原裝正品代理商最優(yōu)惠價(jià)格,現(xiàn)貨或訂貨 |
詢價(jià) | ||
MOT |
92 |
37 |
公司優(yōu)勢(shì)庫存 熱賣中!! |
詢價(jià) |
相關(guān)規(guī)格書
更多- T4N200TW-4
- T4N250BW-2
- T4N250CW
- T4N250CW-4
- T4N250EW-2
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- T4N250TW-4
- T4NM-B5C0
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- T4PK-B01TR7-P
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- T4PK-F01TR7-P
- T4PK-F02TR6
- T4PK-F02TR6-PI
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- T4PK-F04TR6
- T4PK-F04TR6-PI
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- T4S030TW
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- T4S250BW
相關(guān)庫存
更多- T4N250BW
- T4N250BW-4
- T4N250CW-2
- T4N250EW
- T4N250EW-4
- T4N250TW-2
- T4N60
- T4NM-B5C0-P
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- T4NM-D5C0-P
- T4NM-D5C1-P
- T4NM-FDC0-P
- T4NM-FDC1
- T4NM-FDC1-PI
- T4NQ030TW
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- T4QC-DC3B7
- T4QC-FC3B7
- T4QC-FC3B7-PI
- T-4RTD-4DI2-M
- T4S020TW
- T4S040TW
- T4S080TW
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- T4S250CW