TB28F016SC-110中文資料英特爾數(shù)據(jù)手冊PDF規(guī)格書

INTRODUCTION

This datasheet contains 4-, 8-, and 16-Mbit SmartVoltage FlashFile memory specifications. Section 1.0 provides a flash memory overview. Sections 2.0, through 5.0 describe the memory organization and functionality. Section 6.0 covers electrical specifications for commercial and extended temperature product offerings. Section 7.0 contains ordering information. Finally, the bytewide SmartVoltage FlashFile memory family documentation also includes application notes and design tools which are referenced in Section 8.0.

Includes Commercial and Extended Temperature Specifications

■ SmartVoltage Technology

- 2.7 V (Read-Only), 3.3 V or 5 V VCC and 3.3 V, 5 V, or 12 V VPP

■ High-Performance

- 4, 8 Mbit 85 ns Read Access Time

- 16 Mbit 95 ns Read Access Time

■ Enhanced Data Protection Features

- Absolute Protection with VPP = GND

- Flexible Block Locking

- Block Write Lockout during Power Transitions

■ Enhanced Automated Suspend Options

- Program Suspend to Read

- Block Erase Suspend to Program

- Block Erase Suspend to Read

■ Industry-Standard Packaging

- 40-Lead TSOP, 44-Lead PSOP and 40 Bump μBGA* CSP

■ High-Density 64-Kbyte Symmetrical Erase Block Architecture

- 4 Mbit: Eight Blocks

- 8 Mbit: Sixteen Blocks

- 16 Mbit: Thirty-Two Blocks

■ Extended Cycling Capability

- 100,000 Block Erase Cycles

■ Low Power Management

- Deep Power-Down Mode

- Automatic Power Savings Mode Decreases ICC in Static Mode

■ Automated Program and Block Erase

- Command User Interface

- Status Register

■ SRAM-Compatible Write Interface

■ ETOX? V Nonvolatile Flash Technology