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TC1101中文資料TRANSCOM數(shù)據(jù)手冊(cè)PDF規(guī)格書

TC1101
廠商型號(hào)

TC1101

功能描述

Low Noise and Medium Power GaAs FETs

文件大小

250.32 Kbytes

頁面數(shù)量

5

生產(chǎn)廠商 Transcom, Inc.
企業(yè)簡(jiǎn)稱

TRANSCOM

中文名稱

Transcom, Inc.官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二

更新時(shí)間

2025-1-11 17:11:00

TC1101規(guī)格書詳情

DESCRIPTION

The TC1101 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure, high associated gain and high dynamic range. The device can be used in circuits up to 30 GHz and suitable for low noise and medium power amplifier applications including a wide range of commercial and military applications. All devices are 100 DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding.

FEATURES

● Low Noise Figure: NF = 0.5 dB Typical at 12 GHz

● High Associated Gain: Ga = 12 dB Typical at 12 GHz

● High Dynamic Range: 1 dB Compression Power P-1 = 18.5 dBm at 12 GHz

● Breakdown Voltage: BVDGO ≥ 9 V

● Lg = 0.25 μm, Wg = 160 μm

● All-Gold Metallization for High Reliability

● Tight Vp ranges control

● High RF input power handling capability

● 100 DC Tested

產(chǎn)品屬性

  • 型號(hào):

    TC1101

  • 制造商:

    Thomas & Betts

  • 功能描述:

    CABLE TIES

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