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TC2609

Dual power switch color temperature control chip

FUMANFine Made Microelectronics Group Co.,Ltd.

富滿微富滿微電子集團股份有限公司

2609B

BroadbandPhotodiodeModule

The2609Bisapackagedimpedance-matchedphotodiodemodulewithinternalgaindesignedforuseinopticalbroadbandreceiversinfiberopticnetworks.Thepatentedimpedance-matchtechnologyresultsinimprovedgain-bandwidthproductcomparedtoexternalcircuitsduetobettercontrolofparasitic

EMCORE

Emcore Corporation

2609B

2609BBroadbandPhotodiodeModule

Description The2609Bisapackagedimpedance-matchedphotodiodemodulewithinternalgaindesignedforuseinopticalbroadbandreceiversinfiber-opticnetworks.Thepatentedimpedance-matchtechnologyresultsinimprovedgain-bandwidthproductcomparedtoexternalcircuitsduetobettercontro

agere

Agere Systems

2609C

2609CBroadbandPhotodiodeModule

Description The2609Cisapackagedimpedance-matchedphotodiodemodulewithinternalgaindesignedforuseinopticalbroadbandreceiversinfiber-opticnetworks.Thepatentedimpedance-matchtechnologyresultsinimprovedgain-bandwidthproductcomparedtoexternalcircuitsduetocontrolofpa

agere

Agere Systems

AP2609GY-HF

SimpleDriveRequirement,SmallPackageOutline

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

AP2609GYT-HF

SimpleDriveRequirement,SmallSize&LowerProfile

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

CEC2609

DualEnhancementModeFieldEffectTransistor(NandPChannel)

20V,4.8A,RDS(ON)=38mW@VGS=4.5V. FEATURES RDS(ON)=55mW@VGS=2.5V. -20V,-3.0A,RDS(ON)=100mW@VGS=-4.5V. RDS(ON)=145mW@VGS=-2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. S2

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEH2609

DualEnhancementModeFieldEffectTransistor

FEATURES ■20V,3.5A,RDS(ON)=60mΩ@VGS=4.5V. RDS(ON)=80mΩ@VGS=2.5V. ■-20V,-2.5A,RDS(ON)=100mΩ@VGS=-4.5V. RDS(ON)=145mΩ@VGS=-2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapa

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEH2609A

DualEnhancementModeFieldEffectTransistor(NandPChannel)

20V,4A,RDS(ON)=45mW@VGS=4.5V. FEATURES RDS(ON)=55mW@VGS=2.5V. -20V,-2.8A,RDS(ON)=90mW@VGS=-4.5V. RDS(ON)=120mW@VGS=-2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

FKN2609

P-Ch20VFastSwitchingMOSFETs

Description TheFKN2609isthehighcelldensitytrenched P-chMOSFETs,whichprovidesexcellentRDSON andefficiencyformostofthesmallpower switchingandloadswitchapplications. TheFKN2609meetstheRoHSandGreenProduct requirementwithfullfunctionreliabilityapproved.

FETEKFETek Technology Corp.

臺灣東沅東沅科技股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
FM/富滿
24+
SOT23-6
87500
原裝富滿FM假一賠十優(yōu)勢供應(yīng)
 詢價
東芝
22+
NA
500000
萬三科技,秉承原裝,購芯無憂
 詢價
INFINEON
23+
8000
只做原裝現(xiàn)貨
 詢價
INFINEON
23+
7000
詢價
TOSHIBA
24+
SSOP16
500
詢價
UMS
24+
SMD
1680
UMS專營進口原裝現(xiàn)貨假一賠十
 詢價
LINAER
22+
SOT-23-8
3000
原裝正品,支持實單
 詢價
Infineon Technologies
20+
原裝
29860
Infineon微控制器MCU-可開原型號增稅票
 詢價
Infineon Technologies
20+
SMD
600000
原裝正品,現(xiàn)貨通路商
 詢價
Infineon
1931+
N/A
493
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 詢價
更多TC2609供應(yīng)商 更新時間2025-3-14 9:36:00

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