TC518128ASPL-12中文資料東芝數(shù)據(jù)手冊PDF規(guī)格書

Description

The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes

a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The

TC518128A operates from a single 5V power supply. Refreshing is supported by a refresh (RFSH) input which enables two types of

refreshing-auto refresh and self refresh. The TC518128A features a static RAM-like interface with a write cycle in which the input

data is written into the memory cell at the rising edge of R/W thus simplifying the microprocessor interface.

The TC518128A is pin-compatible with the 1M bit CMOS static RAM JEDEC standard and is available in a 32-pin, 0.6 inch and

0.3 inch width plastic DIP, a small outline plastic flat package, and a 32-pin thin small outline plastic package (forward type).

Features

? Organization: 131,072 words x 8 bits

? Single 5V power supply

? Fast access time

*CEA CE Access Time

OE Access Time

TOEA

TRC Cycle Time

Power Dissipation

Self Refresh Current

TC518128A Family

-80

-10

80ns

100ns

35ns

40ns

130ns

160ns

385mW 330mW

1mA/200μA (L version)

Auto refresh is supported by an internal refresh address

counter

Self refresh is supported by an internal timer

Inputs and outputs TTL compatible

? Refresh: 512 refrosh cycles/8ms

Auto refresh power down feature

Pin compatible: 1M SRAM (JEDEC)

Package

-

- TC518128AP/APL

TC518128AF/AFL

- TC518128ASP/ASPL

TC518128AFW/AFWL:

- TC518128AFTL

-12

120ns

50ns

190ns

275mW

: DIP32-P-600

: SOP32-P-450

: DIP32-P-300

SOP32-P-525

: TSOP32-P-0820