TC518128BSPL-10中文資料東芝數(shù)據(jù)手冊(cè)PDF規(guī)格書

Description

The TC518128B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128B utilizes

a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The

TC518128B operates from a single 5V power supply. Refreshing is supported by a refresh (RFSH) input which enables two types of

refreshing - auto refresh and self refresh. The TC518128B features a static RAM-like interface with a write cycle in which the input

data is written into the memory cell at the rising edge of RW thus simplifying the microprocessor interface.

The TC518128B is pin-compatible with the 1M bit CMOS static RAM JEDEC standard and is available in a 32-pin, 0.6 inch and

0.3 inch width plastic DIP, a small outline plastic flat package, and a 32-pin thin small outline plastic package (forward type).

Features

? Organization: 131,072 words x 8 bits

? Single 5V power supply

? Fast access time

ICEA CE Access Time

toEA OE Access Time

tRc Cycle Time

Power Dissipation

Self Refresh Current

TC518128B Family

-70

-80

-10

70ns

80ns

100ns

25ns

30ns

40ns

115ns

130ns

160ns

385mW 330mW 275mW

200μA (L version)

50μA (LL version)

Auto refresh is supported by an internal refresh address

counter

TC518128BPL

- TC518128BFL

- TC518128BSPL

- TC518128BFWL

- TC518128BFTL

? Self refresh is supported by an internal timer

? Inputs and outputs TTL compatible

? Refresh: 512 refresh cycles/8ms

? Auto refresh power down feature

? Pin compatible: 1M SRAM (JEDEC)

? Package

: DIP32-P-600

: SOP32-P-450

: DIP32-P-300

: SOP32-P-525

: TSOP32-P-0820