TC518129BFWL中文資料東芝數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

Description

The TC518129B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129B utilizes

a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The

TC518129B operates from a single 5V power supply. Refreshing is supported by a refresh (RFSH) input which enables two types of

refreshing - auto refresh and self refresh. The TC518129B features a static RAM-like interface with a write cycle in which the input

data is written into the memory cell at the rising edge of RWW thus simplifying the microprocessor interface.

A CS standby mode interface is incorporated in the TC5181298 family, with the CE2 pin in the TC518128B family changed to a

CS pin. The TC5181298 is available in a 32-pin, 0.6 inch and 0.3 inch width plastic DIP, a small outline plastic flat package, and a 32-

pin thin small outline plastic package (forward type).

Features

Organization: 131,072 words x 8 bits

Single 5V power supply

? Fast access time

ICEA CE Access Time

TOEA OE Access Time

tac Cycle Time

Power Dissipation

Self Refresh Current

TC5181298 Family

-70

-80

70ns

80ns

25ns

30ns

115ns

130ns

385mW 330mW

- TC518129BPL

- TC518129BFL

- TC518129BSPL

TC518129BFWL

TC518129BFTL.

200μA (L version)

50μA (LL version)

Auto refresh is supported by an internal refresh address

counter

? Self refresh is supported by an internal timer

? Inputs and outputs TTL compatible

? Refresh: 512 refresh cycles/8ms

? Auto refresh power down feature

? Package

-10

100ns

40ns

160ns

275mW

: DIP32-P-600

: SOP32-P-450

: DIP32-P-300

: SOP32-P-525

: TSOP32-P-0820