TC5501D中文資料東芝數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

DESCRIPTION

The TC5501P/D is a fully static read write memory

organized as 256 words by 4 bits using CMOS tech-

nology. Because of ultra low power dissipation, the

TC5501P/D can be used as battery operated portable

memory system and also as a nonvolatile memory

with battery back up. The TC5501P/D operates from

a single BV power supply with a static operation, so

that the no refresh periods are required. This simpli-

fies the power supply circuit design.

The three state outputs simplify the memory ex-

pansion making the TC5501P/D suitable for use in a

microprocessor peripheral memory. Since the mini-

mum data retention voltage is 2V, the battery back

up system needsonly simple circuit. By using Toshiba's

original C*MOS technology, the device circuitry is

not only simplified but wide operating margin and

noise margin are also realized.

The TC5501P/Dis offered in standard 22 pin plastic

and cerdip packages, 0.4 inch in width.

FEATURES

? Low Power Dissipation

- 55uW (MAX.} STANDBY

- 83mW (MAX.) OPERATING

e Single 5V Power Supply

o Data Retention Voltage 2V to 5.5V

e Package

- Plastic DIP : TC5501P

- Cerdip DIP : TC5501D

e Fully static operation

e Three State Output

e Input/output, TTL Compatible

? Access Time

TCS501P/D ; tACC S 450ns (MAX)

TCBB01P-1/D-1; tacC S 650ns (MAX.)