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TC551001AFTI

131,072 WORD x 8 BIT STATIC RAM

Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC551001AFTI

131,072 WORD x 8 BIT STATIC RAM

Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC551001AFTI-10

131,072 WORD x 8 BIT STATIC RAM

Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC551001AFTI-10L

131,072 WORD x 8 BIT STATIC RAM

Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC551001AFTI-85

131,072 WORD x 8 BIT STATIC RAM

Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC551001AFTI-85L

131,072 WORD x 8 BIT STATIC RAM

Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC551001AFTL

131,072WORDx8BITSTATICRAM

Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC551001AFTL

131,072WORDx8BITSTATICRAM

Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC551001API

131,072WORDx8BITSTATICRAM

Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC551001API

131,072WORDx8BITSTATICRAM

Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC551001APL

131,072WORDx8BITSTATICRAM

Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC551001APL

131,072WORDx8BITSTATICRAM

Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC551001ATRI

131,072WORDx8BITSTATICRAM

Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC551001ATRI

131,072WORDx8BITSTATICRAM

Description TheTC551001APIisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC551001ATRL

131,072WORDx8BITSTATICRAM

Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC551001ATRL

131,072WORDx8BITSTATICRAM

Description TheTC551001APLisa1,048,576bitCMOSstaticrandomaccessmemoryorganizedas131,072wordsby8bitsandoperated fromasingle5Vpowersupply.Advancedcircuittechniquesprovidebothhighspeedandlowpowerfeatureswithanoperatingcur- rentof5mA/MHz(typ.)andaminimum

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC551001BFL

131,072-WORDBY8-BITSTATICRAM

DESCRIPTION TheTC551001BPL/BFL/BFTL/BTRLisa1,048,576-bitstaticrandomaccessmemory(SRAM)organizedas 131,072wordsby8bits.FabricatedusingToshiba'sCMOSSilicongateprocesstechnology,thisdevice operatesfromasingle5V±10powersupply.Advancedcircuittechnologyprovidesb

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC551001BFL

131,072-WORDBY8-BITSTATICRAM

DESCRIPTION TheTC551001BPL/BFL/BFTL/BTRLisa1,048,576-bitstaticrandomaccessmemory(SRAM)organizedas 131,072wordsby8bits.FabricatedusingToshiba'sCMOSSilicongateprocesstechnology,thisdevice operatesfromasingle5V±10powersupply.Advancedcircuittechnologyprovidesb

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC551001BFTL

131,072-WORDBY8-BITSTATICRAM

DESCRIPTION TheTC551001BPL/BFL/BFTL/BTRLisa1,048,576-bitstaticrandomaccessmemory(SRAM)organizedas 131,072wordsby8bits.FabricatedusingToshiba'sCMOSSilicongateprocesstechnology,thisdevice operatesfromasingle5V±10powersupply.Advancedcircuittechnologyprovidesb

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC551001BFTL

131,072-WORDBY8-BITSTATICRAM

DESCRIPTION TheTC551001BPL/BFL/BFTL/BTRLisa1,048,576-bitstaticrandomaccessmemory(SRAM)organizedas 131,072wordsby8bits.FabricatedusingToshiba'sCMOSSilicongateprocesstechnology,thisdevice operatesfromasingle5V±10powersupply.Advancedcircuittechnologyprovidesb

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
TOSHIBA
22+
TSSOP-32
4650
詢價(jià)
TOSH
22+
TSOP
8200
原裝現(xiàn)貨庫(kù)存.價(jià)格優(yōu)勢(shì)
詢價(jià)
TOSHIBA/東芝
2021+
TSOP32
100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
詢價(jià)
TOSH
23+
11200
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO
詢價(jià)
Toshiba
4
公司優(yōu)勢(shì)庫(kù)存 熱賣中!!
詢價(jià)
TOSHIBA
16+
DIP
73
優(yōu)勢(shì)真實(shí)庫(kù)存
詢價(jià)
TOSHIBA
2024+
DIP-32
50000
原裝現(xiàn)貨
詢價(jià)
24+
2500
自己現(xiàn)貨
詢價(jià)
TOSHIBA
2022
DIP-32
8885
全新原裝現(xiàn)貨
詢價(jià)
TOSHIBA
23+24
DIP-32
9680
原盒原標(biāo).進(jìn)口原裝.支持實(shí)單 .價(jià)格優(yōu)勢(shì)
詢價(jià)
更多TC551001AFTI供應(yīng)商 更新時(shí)間2024-11-15 17:11:00