TC558128BJ_V01中文資料東芝數(shù)據(jù)手冊PDF規(guī)格書

DESCRIPTION

The TC558128BJ/BFT is a 1,048,576-bit high-speed static random access memory (SRAM) organized as

131,072 words by 8 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high

speed, it operates from a single 5 V power supply. There are two control inputs. Chip enable (CE) can be used

to place the device in a low-power mode, and output enable (OE) provides fast memory access. This device is

well suited to cache memory applications where high-speed access and high-speed storage are required. All

inputs and outputs are directly TTL compatible. The TC558128BJ/BFT is available in a plastic 32-pin SOJ

(400 mil width) and TSOP packages for high density surface assembly.

FEATURES

? Fast access time (the following are maximum values)

TC558128BJ/BFT-10: 10 ns

? Low-power dissipation

(the following are maximum values)

Cycle Time

10 12 15 20 25 ns

Operation (max) 210 190 170 140 130 mA

Standby: 1 mA (both devices)

Single power supply voltage of 5 V ± 5.

? Fully static operation

? All inputs and outputs are TTL compatible

? Output buffer control using OE

● Package:

SOJ32-P-400-1.27A (BJ)

(Weight: 1.22 g typ)

TSOPII 32-P-400-0.80C (BFT) (Weight: 0.34 g typ)