TC58DVM82F1FT00中文資料東芝數(shù)據(jù)手冊PDF規(guī)格書

DESCRIPTION

The TC58DxM72x1xxxx is a 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2 PROM) organized as 528 bytes/264 words u32 pages u1024 blocks. The device uses dual power supplies (2.7 V to 3.6 V for VCCand 1.65 V to 1.95 V for VCCQ). The device has a 528-byte/264-words static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte/256-words increments. The Erase operation is implemented in a single block unit (16 Kbytes 512 bytes:

528 bytes u32 pages/8k words + 256 words:264 words x 32 pages).

FEATURES

Organization TC58DxM72A1xxxx TC58DxM72F1xxxx

Memory cell allay 528 x 32K x8 264 x 32k x 16

Register 528 x 8 264 x 16

Page size 528 bytes 264 words

Block size (16K 512) bytes (8k + 256) words

Modes

Read, Reset, Auto Page Program

Auto Block Erase, Status Read

Mode control

Serial input/output

Command control

Power supply TC58DVM72x1xxxx TC58DAM72x1xxxx

Vcc: 2.7V to 3.6V 2.7V to 3.6V

Vccq: 2.7V to 3.6V 1.65V to 1.95V

Program/Erase Cycles 1E5 cycle (with ECC)

Access time

Cell array to register 25 Ps max

Serial Read Cycle 50 ns min

Operating current

Read (50 ns cycle) 10 mA typ.

Program (avg.) 10 mA typ.

Erase (avg.) 10 mA typ.

Standby 50 PA max.

Package

TSOP I 48-P-1220-0.50 (Weight:0.53g typ)