TCED2100_V02中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書

DESCRIPTION

The TCED2100/TCED4100 consists of a phototransistor

optically coupled to a gallium arsenide infrared-emitting

diode in a 8-pin (dual) or 16-pin (quad) plastic dual inline

package.

The elements are mounted on one leadframe providing a

fixed distance between input and output for highest safety

requirements.

FEATURES

? Isolation materials according to UL94-VO

? Pollution degree 2 (DIN/VDE 0110/resp. IEC

60664)

? Climatic classification 55/100/21 (IEC 60068

part 1)

? Special construction: therefore, extra low

coupling capacity of typical 0.2 pF, high common

mode rejection

? Low temperature coefficient of CTR

? Creepage current resistance according to VDE 0303/

IEC 60112 comparative tracking index: CTI ≥ 175

? Rated impulse voltage (transient overvoltage)

VIOTM = 8 kV peak

? Isolation test voltage (partial discharge test voltage)

Vpd = 1.6 kV peak

? Rated isolation voltage (RMS includes DC)

VIOWM = 600 VRMS

? Rated recurring peak voltage (repetitive)

VIORM = 848 V peak

? Thickness though insulation ≥ 0.75 mm

? Lead (Pb)-free component

? Component in accordance to RoHS 2002/95/EC and

WEEE 2002/96/EC