TDG650E60中文資料TELEDYNE數(shù)據(jù)手冊PDF規(guī)格書

Features

? 650 V enhancement mode power switch with P-GaN

gate structure

? Bottom- or Top-side cooled configuration

? RDS(on) = 25 m? (typ)

? IDS(max) = 60 A

? Ultra-low FOM Island Technology? die

? Ultra-low inductance GaNPX? package

? Easy gate drive requirements (0 V to 6 V) with 7V

tolerance

? Transient tolerant gate drive (-20 / +10 V) 1μs

? Very high switching frequency (> 10 MHz)

? Reverse current capability

? Zero reverse recovery loss

? Small 11 x 9 mm2 PCB footprint

? Source Sense (SS) pads for optimized gate drive

? Dual gate and source sense pads for optimal board

layout

? RoHS compliant

? Single diffusion lot available

? Enhanced wafer level reliability

? HiRel qualification flow

? Obsolescence support

Applications

? High efficiency power conversion

? High density power conversion

? ac-dc Converters

? Bridgeless Totem Pole PFC

? ZVS Phase Shifted Full Bridge

? Half & Full Bridge topologies

? Synchronous Buck or Boost

? Uninterruptable Power Supplies

? Motor Drives

? Single and 3Φ inverterlegs

? Solar and Wind Power

? Fast Battery Charging

? dc-dc Converters

? On Board Battery Chargers

? E-Switch

Description

Teledyne’s TDG650E60 is an enhancement mode GaNon-silicon power transistor based on GaN

Systems Technology. The properties of GaN ensure

high current, high voltage breakdown combined

with very high switching frequency. GaN Systems

implements patented Island Technology? cell layout for

high-current performance and excellent thermal

characteristics. GaNPX? packaging is designed for very

low parasitic inductance in a smallest package. The

TDG650E60 is alternatively a Bottom- or Top-side

cooled transistor that offers very low

junction-to-case thermal resistance for demanding high

power applications. These features combined provide

very high efficiency powerswitching.