TE28F128J3D-75中文資料NUMONYX數(shù)據(jù)手冊PDF規(guī)格書

Introduction

This document contains information pertaining to the Numonyx? Embedded Flash Memory (J3 v D) device features, operation, and specifications.

Product Features

■ Architecture

— Symmetrical 128-Kbyte blocks

— 256 Mbit (256 blocks)

— 128 Mbit (128 blocks)

— 64 Mbit (64 blocks)

— 32 Mbit (32 blocks)

■ Performance

— 75 ns Initial Access Speed (32,64,128 Mbit densities)

— 95 ns Initial Access Speed (256Mbit only)

— 25 ns 8-word and 4-word Asynchronous page-mode reads

— 32-Byte Write buffer; 4 μs per Byte Effective programming time

■ System Voltage

— VCC = 2.7 V to 3.6 V

— VCCQ = 2.7 V to 3.6 V

■ Packaging

— 56-Lead TSOP (32, 64, 128, 256 Mbit)

— 64-Ball Numonyx Easy BGA package (32, 64, 128 and 256 Mbit)

■ Security

— Enhanced security options for code protection

— 128-bit Protection Register: 64-bits Unique device identifier bits 64-bits User-programmable OTP bits

— Absolute protection with VPEN = GND

— Individual block locking

— Block erase/program lockout during power transitions

■ Software

— Program and erase suspend support

— Flash Data Integrator (FDI), Common Flash Interface (CFI) Compatible

■ Quality and Reliability

— Operating temperature: -40 °C to +85 °C

— 100K Minimum erase cycles per block

— 0.13 μm ETOX? VIII Process technology