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TIP127

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

DESCRIPTION TheTIP122aresiliconEpitaxial-BaseNPNpowertransistorsinmonolithicDarlingtonconfigurationmountedinJedecTO-220plasticpackage.Theyareintentedforuseinpowerlinearandswitchingapplications.ThecomplementaryPNPtypesareTIP127respectively.

TGS

Tiger Electronic Co.,Ltd

TIP127

SiliconPNPDarlingtonPowerTransistors

MCCMicro Commercial Components

美微科美微科半導體股份有限公司

TIP127

ComplementarypowerDarlingtontransistors

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

TIP127

SiliconPNPDarlingtonPowerTransistors

DESCRIPTION ?WithTO-220Cpackage ?DARLNGTON ?HighDCcurrentgain ?Lowcollectorsaturationvoltage ?ComplementtotypeTIP120/121/122 APPLICATIONS ?Designedforgeneral–purposeamplifier andlow–speedswitchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

TIP127

DarlingtonPowerTransistors(PNP)

DarlingtonPowerTransistors(PNP) Features ?Designedforgeneral-purposeamplifierandlowspeed switchingapplications ?RoHSCompliant

TAITRON

TAITRON Components Incorporated

TIP127

DarlingtonTransistors

[SGS] POWERDARLINGTONS TheTIP120,TIP121andTIP122aresiliconepitaxial-baseNPNtransistorsinmonolithicDarlingtonconfigurationinJedecTO-220plasticpackage,intendedforuseinpowerlinearandswitchingapplications. ThecomplementaryPNPtypesaretheTIP125,TIP126andTIP127res

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

TIP127

Plastic-EncapsulatedTransistors

PLASTICPOWERTRANSISTORS HighPowerSwitching,HammerDrive,PulseMotorDriveandInductiveLoadDriveApplications

TEL

TRANSYS Electronics Limited

TIP127

Si-EpitaxialPlanarDarlingtonPowerTransistors

Diotec

Diotec Semiconductor

TIP127

POWERTRANSISTORS(5.0A,60-100V,65W)

...designedforgeneral?purposeamplifierandlow?speedswitchingapplications. FEATURES: ?Collector?EmitterSustainingVoltage? VCEO(sus)=60V(Min)?TIP120,TIP125 =80V(Min)?TIP121,TIP126 =100V(Min)?TIP122,TIP127 ?LowColl

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導體股份有限公司

TIP127

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

Description Thedevicesaremanufacturedinplanartechnologywith“baseisland”layoutandmonolithicDarlingtonconfiguration.Theresultingtransistorsshowexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. Features ■Lowcollector-emittersaturationvoltage ■Comp

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

詳細參數(shù)

  • 型號：

    TG-127

  • 制造商：

    CLARE

  • 制造商全稱：

    Clare, Inc.

  • 功能描述：

    HIGH ENERGY SPARK GAP DEVICES

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