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TGF4230-EEU中文資料TriQuint數(shù)據(jù)手冊PDF規(guī)格書

TGF4230-EEU
廠商型號(hào)

TGF4230-EEU

功能描述

1.2mm Discrete HFET

文件大小

178.77 Kbytes

頁面數(shù)量

7

生產(chǎn)廠商 TriQuint Semiconductor
企業(yè)簡稱

TriQuint

中文名稱

TriQuint Semiconductor官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-23 11:10:00

TGF4230-EEU規(guī)格書詳情

DESCRIPTION

The Triquint TGF4230 - EEU is a single gate 1.2 mm Discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high- efficiency power applications up to 1 2- GHz in Class A and Class AB operation.

Bond- pad and backside metalization is gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire- bonding processes. The TGF4230-EEU is readily assembled using automatic equipment.

● 1200 μm X 0.5 μm HFET

● Nominal Pout of 28.5- dBm at 8.5-GHz

● Nominal Gain of 10.0-dB at 8.5-GHz

● Nominal PAE of 55 at 8.5-GHz

● Suitable for High-Reliability Applications

● 0,572 x 0,699 x 0,102 mm (0.023 x 0.028 x 0.004 in.)

產(chǎn)品屬性

  • 型號(hào):

    TGF4230-EEU

  • 制造商:

    TRIQUINT

  • 制造商全稱:

    TriQuint Semiconductor

  • 功能描述:

    1.2mm Discrete HFET

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