TH58BVG3S0HBAI6中文資料東芝數(shù)據(jù)手冊PDF規(guī)格書

DESCRIPTION

The TH58BVG3S0HBAI6 is a single 3.3V 8Gbit (8,858,370,048 bits) NAND Electrically Erasable and

Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096 blocks.

The device has a 4224-byte static register which allows program and read data to be transferred between the register

and the memory cell array in 4224-bytes increments. The Erase operation is implemented in a single block unit

(256 Kbytes + 8 Kbytes: 4224 bytes × 64 pages).

The TH58BVG3S0HBAI6 is a serial-type memory device which utilizes the I/O pins for both address and data

input/output as well as for command inputs. The Erase and Program operations are automatically executed making

the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still

cameras and other systems which require high-density non-volatile memory data storage.

The TH58BVG3S0HBAI6 has ECC logic on the chip and 8bit read errors for each 528Bytes can be corrected

internally.

FEATURES

? Organization

x8

Memory cell array 4224 × 128K × 8 × 2

Register 4224 × 8

Page size 4224 bytes

Block size (256K + 8K) bytes

? Modes

Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy,

Multi Page Read, Multi Page Program, Multi Block Erase, ECC Status Read

? Mode control

Serial input/output

Command control

? Number of valid blocks

Min 4016 blocks

Max 4096 blocks

? Power supply

VCC = 2.7V to 3.6V

? Access time

Cell array to register 55 μs typ. (Single Page Read) / 90 μs typ. (Multi Page Read)

Read Cycle Time 25 ns min (CL=50pF)

? Program/Erase time

Auto Page Program 340 μs/page typ.

Auto Block Erase 2.5 ms/block typ.

? Operating current

Read (25 ns cycle) 30 mA max

Program (avg.) 30 mA max

Erase (avg.) 30 mA max

Standby 100 μA max

? Package

P-VFBGA67-0608-0.80-001 (Weight: 0.101 g typ.)

? 8bit ECC for each 528Byte is implemented on the chip.