首頁 >THS6072IDGN>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
THS6072IDGN | LOW-POWER ADSL DIFFERENTIAL RECEIVER | TITexas Instruments 德州儀器美國德州儀器公司 | TI | |
LOW-POWER ADSL DIFFERENTIAL RECEIVER | NSCNational Semiconductor (TI) 美國國家半導(dǎo)體美國國家半導(dǎo)體公司 | NSC | ||
LOW-POWER ADSL DIFFERENTIAL RECEIVER | NSCNational Semiconductor (TI) 美國國家半導(dǎo)體美國國家半導(dǎo)體公司 | NSC | ||
Package:8-TSSOP,8-MSOP(0.118",3.00mm 寬)裸露焊盤;包裝:卷帶(TR) 類別:集成電路(IC) 驅(qū)動器,接收器,收發(fā)器 描述:IC RECEIVER 0/2 8MSOPPOWERPAD | TI1Texas Instruments 德州儀器 | TI1 | ||
SINGLEPOLE,EIGHTTHROWCOMMERCIALCONNECTORIZEDPLUG-INSWITCHES | MICRONETICS Micronetics, Inc. | MICRONETICS | ||
WhiteBacklightLEDDriversforSmalltoMediumLCDPanels(SwitchingRegulatorType) | ROHMRohm 羅姆羅姆半導(dǎo)體集團 | ROHM | ||
Synchronousrectificationstep-upDC/DCconverterformobilephone | ROHMRohm 羅姆羅姆半導(dǎo)體集團 | ROHM | ||
BoostDC/DCconverter,AdjustmentofbrightnessbyexternalPWMpulse | ROHMRohm 羅姆羅姆半導(dǎo)體集團 | ROHM | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,54A,RDS(ON)=9mW@VGS=10V. RDS(ON)=13mW@VGS=4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,50A,RDS(ON)=8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=11mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,12.5A,RDS(ON)=10mW@VGS=10V. RDS(ON)=14mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,50A,RDS(ON)=8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=11mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,45A,RDS(ON)=8.5mW@VGS=10V. RDS(ON)=12mW@VGS=4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
SIL2MultifunctionTemperatureConverter FEATURES SIL2/SC3 InstallationinZone2(pending) InstallationinDiv.2 mV,TC,2/3/4wireres./RTDorpotentiometerinput Duplication/inversion/scaling/customoutput SelectableCJC:internalPT1000,externalRTDorfixed Fastestintegrationtime:50ms Burnout/internal/cjc/insensor | GMI G.M. International | GMI | ||
SIL2MultifunctionTemperatureConverter FEATURES SIL2/SC3 InstallationinZone2(pending) InstallationinDiv.2 mV,TC,2/3/4wireres./RTDorpotentiometerinput Duplication/inversion/scaling/customoutput SelectableCJC:internalPT1000,externalRTDorfixed Fastestintegrationtime:50ms Burnout/internal/cjc/insensor | GMI G.M. International | GMI | ||
SIL2MultifunctionTemperatureConverter FEATURES SIL2/SC3 InstallationinZone2(pending) InstallationinDiv.2 mV,TC,2/3/4wireres./RTDorpotentiometerinput Duplication/inversion/scaling/customoutput SelectableCJC:internalPT1000,externalRTDorfixed Fastestintegrationtime:50ms Burnout/internal/cjc/insensor | GMI G.M. International | GMI | ||
2URackmountNetworkAppliancewith4thGenerationIntel?Xeon?ScalableProcessorforNFV Features ?Upto52coresforNFVneedswithsingle4thGenerationIntel?Xeon? scalableprocessors ?Upto16DDR5RDIMMmemorytoboostcomputingcapability ?8xNMCwithPCIeGen5fornetworking(CompatiblewithGen4&Gen3) ?Highavailabilitysystemwithredundantsolutions ?Managing | ADVANTECHAdvantech Co., Ltd. 研華科技研華科技(中國)有限公司 | ADVANTECH | ||
MDL,SIN,1GPP,1:1,SM,TU | pulse Pulse A Technitrol Company | pulse | ||
MDL,SIN,1GPP,1:1,SM,TU | pulse Pulse A Technitrol Company | pulse | ||
1500WATTSPEAKPOWERDISSIPATION | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI |
詳細參數(shù)
- 型號:
THS6072IDGN
- 功能描述:
高速運算放大器 Low-Power ADSL Diff Receiver
- RoHS:
否
- 制造商:
Texas Instruments
- 通道數(shù)量:
1 電壓增益
- dB:
116 dB
- 輸入補償電壓:
0.5 mV
- 轉(zhuǎn)換速度:
55 V/us
- 工作電源電壓:
36 V
- 電源電流:
7.5 mA
- 最大工作溫度:
+ 85 C
- 安裝風(fēng)格:
SMD/SMT
- 封裝/箱體:
SOIC-8
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
TI |
22+ |
MSOP8 |
800000 |
原裝正品 |
詢價 | ||
TI |
24+ |
MSOP-8P |
36 |
詢價 | |||
TI |
11+ |
MSOP8 |
8000 |
全新原裝,絕對正品現(xiàn)貨供應(yīng) |
詢價 | ||
TI |
2016+ |
MSOP8 |
6528 |
只做原廠原裝現(xiàn)貨!終端客戶個別型號可以免費送樣品! |
詢價 | ||
TI |
24+ |
2978 |
十年品牌!原裝現(xiàn)貨!!! |
詢價 | |||
TI |
20+ |
HTSSOP |
2960 |
誠信交易大量庫存現(xiàn)貨 |
詢價 | ||
TI/德州儀器 |
2021+ |
MSOP-8 |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
TI/德州儀器 |
MSOP8 |
6698 |
詢價 | ||||
TI |
22+ |
NA |
500000 |
萬三科技,秉承原裝,購芯無憂 |
詢價 | ||
TI/德州儀器 |
23+ |
HTSSOP |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 |
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