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TIP106

POWERTRANSISTORS(8A,60-100V,80W)

8AmpereDARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS60-100VOLTS80WATTS TIP100,TIP101,TIP102-->NPN TIP105,TIP106,TIP107-->PNP

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司

TIP106

PNPSILICONPOWERDARLINGTONS

●DesignedforComplementaryUsewithTIP100,TIP101andTIP102 ●80Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MaximumVCE(sat)of2.5VatIC=8A

POINN

Power Innovations Ltd

TIP106

DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS

PlasticMedium?PowerComplementarySiliconTransistors Designedforgeneral?purposeamplifierandlow?speedswitchingapplications. Features ?HighDCCurrentGain?hFE=2500(Typ)@IC=4.0Adc ?Collector?EmitterSustainingVoltage?@30mAdc VCEO(sus)=60Vdc(Min)?

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

TIP106

DARLINGTON8AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS

DARLINGTON8AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60–80–100VOLTS 80WATTS ...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. ?HighDCCurrentGain—hFE=2500(Typ)@IC=4.0Adc ?Collector–EmitterSustainingVoltage—@30mAdc

Motorola

Motorola, Inc

TIP106

PNPSILICONPOWERDARLINGTONS

TIP100,TIP101,TIP102-->NPN TIP105,TIP106,TIP107-->PNP

TRSYS

Transys Electronics

TIP106

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors

MonolithicConstructionWithBuiltInBaseEmitterShuntResistors ?HighDCCurrentGain:hFE=1000@VCE=-4V,IC=-3A(Min.) ?Collector-EmitterSustainingVoltage ?LowCollector-EmitterSaturationVoltage ?IndustrialUse ?ComplementarytoTIP100/101/102

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

TIP106

PowerDarlingtonsforLinearandSwitchingApplications

TIP100,101,102NPNPLASTICPOWERTRANSISTORS TIP105,106,107PNPPLASTICPOWERTRANSISTORS PowerDarlingtonsforLinearandSwitchingApplications

bocaBoca Semiconductor Corporation

博卡博卡半導(dǎo)體公司

TIP106

PLASTICPOWERTRANSISTORS

PLASTICPOWERTRANSISTORS IntendedforuseinLinearSwitchingApplications

TEL

TRANSYS Electronics Limited

TIP106

SiliconPNPDarlingtonPowerTransistors

DESCRIPTION ?WithTO-220Cpackage ?DARLINGTON ?HighDCcurrentgain ?Lowcollectorsaturationvoltage ?ComplementtotypeTIP100/101/102 APPLICATIONS ?Forindustrialuse

SAVANTIC

Savantic, Inc.

TIP106

iscSiliconPNPDarlingtonPowerTransistor

DESCRIPTION ?HighDCCurrentGain-:hFE=1000(Min)@IC=-3A ?Collector-EmitterSustainingVoltage-:VCEO(SUS)=-80V(Min) ?LowCollector-EmitterSaturationVoltage-:VCE(sat)=-2.0V(Max)@IC=-3A =

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

TIP106

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors -HighDCCurrentGain:hFE=1000@VCE=-4V,IC=-3A(Min.) -Collector-EmitterSustainingVoltage -LowCollector-EmitterSaturationVoltage -IndustrialUse -ComplementarytoTIP100/101/102

SEMIHOW

SemiHow Co.,Ltd.

TIP106

PNPPlasticMedium-PowerSiliconTransistors

Features ?LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) ?HighDCCurrentGain:hFE=2500(Typ)@IC=4.0Adc ?LowCollector-EmitterSaturationVoltage ?MonolithicConstructionwithBuilt-inBase-EmitterShuntResistors ?TO-220Compac

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

TIP106

SiliconPNPDarlingtonPowerTransistors

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

TIP106

TO-220-PowerTransistorsandDarlingtons

RECTRON

Rectron Semiconductor

TIP106

PlasticMedium??owerComplementarySiliconTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

TIP106

DarlingtonPowerTransistors(PNP)

DarlingtonPowerTransistors(PNP) Features ?Designedforgeneral-purposeamplifierandlowspeedswitchingapplications ?RoHSCompliant

TAITRON

TAITRON Components Incorporated

TIP106

PlasticMedium-PowerComplementarySiliconTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

TIP106

SiliconPNPDarlingtonPowerTransistors

SAVANTIC

Savantic, Inc.

TIP106

SILICONDARLINGTONPOWERTRANSISTORS

SILICONDARLINGTONPOWERTRANSISTORS PNPepitaxial-basetransistorsinamonolithicDalringtoncircuitandhousedinaTO-220enveloppe.Theyaredesignedforgeneralpurposeamplifierandlow-speedswitchingapplications. NPNcomplementsareTIP100-101-102 CompliancetoRoHS.

COMSET

Comset Semiconductor

TIP106

PNPEpitaxialSiliconDarlingtonTransistor

MonolithicConstructionWithBuiltInBaseEmitterShuntResistors ?HighDCCurrentGain:hFE=1000@VCE=-4V,IC=-3A(Min.) ?Collector-EmitterSustainingVoltage ?LowCollector-EmitterSaturationVoltage ?IndustrialUse ?ComplementarytoTIP100/101/102

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào)：

    TICP106M-R-S

  • 功能描述：

    SCR 600V 2A SCR

  • RoHS：

    否

  • 制造商：

    STMicroelectronics 最大轉(zhuǎn)折電流

  • IBO：

    480 A 額定重復(fù)關(guān)閉狀態(tài)電壓

  • VDRM：

    600 V

  • 關(guān)閉狀態(tài)漏泄電流（在VDRM_IDRM下）：

    5 uA

  • 開啟狀態(tài)：

    RMS

  • 正向電壓下降：

    1.6 V

  • 柵觸發(fā)電壓(Vgt)：

    1.3 V

  • 最大柵極峰值反向電壓：

    5 V

  • 柵觸發(fā)電流(Igt)：

    35 mA 保持電流（Ih

  • 最大值）：

    75 mA

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    TO-220

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
2023+
80000
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BOURNS/伯恩斯
2020+
NA
80000
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BOURNS/伯恩斯
2021+
NA
100500
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BOURNS
23+
TO-92
20000
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BOURNS
22+
TO-92
28600
只做原裝正品現(xiàn)貨假一賠十一級(jí)代理
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BOURNS
23+
TO-92
50000
全新原裝正品現(xiàn)貨,支持訂貨
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BOURNS/伯恩斯
23+
TO-92
11200
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO
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BOURNS/伯恩斯
22+
TO-92
50000
只做原裝正品,假一罰十,歡迎咨詢
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BOURNS
22+
NA
30000
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BOURNS
1026
TO-92
280
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
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更多TICP106M-R-S供應(yīng)商 更新時(shí)間2024-11-18 8:00:00

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