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TIM1011-8UL

MICROWAVE POWER GaAs FET

FEATURES ?BROADBANDINTERNALLYMATCHEDFET ?HIGHPOWER P1dB=39.5dBmat10.7GHzto11.7GHz ?HIGHGAIN G1dB=9.0dBat10.7GHzto11.7GHz ?LOWINTERMODULATIONDISTOTION IM3=-45dBcatPout=27.0dBm SingleCarrierLevel ?HERMETICALLYSEALEDPACKAGE

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

EIC1011-8

10.70-11.70GHz8-WattInternallyMatchedPowerFET

FEATURES ?10.70–11.70GHzBandwidth ?Input/OutputImpedanceMatchedto50Ohms ?+39.0dBmOutputPowerat1dBCompression ?6.0dBPowerGainat1dBCompression ?30PowerAddedEfficiency ?-46dBcIM3atPO=28.5dBmSCL ?100TestedforDC,RF,andRTH

Excelics

Excelics Semiconductor, Inc.

FLM1011-8F

X,Ku-BandInternallyMatchedFET

DESCRIPTION TheFLM1011-8FisapowerGaAsFETthatisinternallymatchedforstandardcommunicationbandstoprovideoptimumpowerandgainina50ohmsystem. Eudyna’sstringentQualityAssuranceProgramassuresthehighestreliabilityandconsistentperformance. FEATURES ?HighOutputPower

EUDYNA

Eudyna Devices Inc

NEZ1011-8E

8WX,Ku-BANDPOWERGaAsMESFET

DESCRIPTION TheNEZ1011-8EandNEZ1414-8EarepowerGaAsMESFETswhichprovidehighgain,highefficiencyandhighoutputinX,Ku-band.Theinternalinputandoutputmatchingenablesguaranteedperformancetobeachievedwithonlya50?externalcircuit.Toreducethermalresistancethedevic

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NEZ1011-8E

GaAsMESFET

DESCRIPTION TheNEZ1011-8EispowerGaAsFETwhichprovideshigh gain,highefficiencyandhighoutputpowerinKu-band. Theinternalinputandoutputmatchingenablesguaranteed performancetobeachievedwithonlya50Wexternal circuit. Toreducethermalresistance,thedevicehasaPHS

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

TIM1011-8L

MICROWAVEPOWERGaAsFET

Theinformationcontainedhereinispresentedonlyasaguidefortheapplicationsofourproducts.NoresponsibilityisassumedbyTOSHIBAforanyinfringementsofpatentsorotherrightsofthethirdpartieswhichmayresultsfromitsuse,Nolicenseisgrantedbyimplicationorotherwiseunder

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

詳細(xì)參數(shù)

  • 型號(hào):

    TIM1011-8UL

  • 制造商:

    Toshiba America Electronic Components

  • 功能描述:

    TRANSISTOR, GAAS FET INTERNALLY MATCHED, 11GHZ, 60W - Trays

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TOSHIBA
24+
SMD
1680
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TOSHIBA/東芝
24+
780
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TOSHIBA/東芝
2021+
3000
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TOSHIBA
21+
標(biāo)準(zhǔn)封裝
50
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TOSHIBA/東芝
24+
N/A
10000
只做原裝正品上傳就有貨假一賠十
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TOSHIBA/東芝
23+
11200
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TOSHIBA/東芝
23+
TO-59
8510
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MALLORY
2023+
80000
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Cornell
22+
NA
75
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24+
N/A
82000
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更多TIM1011-8UL供應(yīng)商 更新時(shí)間2025-1-27 9:26:00