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首頁 >TIM5964-4SL>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
MICROWAVE POWER GaAs FET FEATURES ?BROADBANDINTERNALLYMATCHEDFET ?HIGHPOWER P1dB=36.5dBmat5.85GHzto6.75GHz ?HIGHGAIN G1dB=8.0dB(Min.)at5.85GHzto6.75GHz ?HERMETICALLYSEALEDPACKAGE ?LOWINTERMODULATIONDISTORTION IM3=-45dBcatPout=25.5dBm SingleCarrierLevel. | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
5.90-6.40GHz4-WattInternallyMatchedPowerFET | Excelics Excelics Semiconductor, Inc. | Excelics | ||
5.9-6.4GHzMulti-StagePowerAmplifier | Excelics Excelics Semiconductor, Inc. | Excelics | ||
C-BandInternallyMatchedFET [Endyna] DESCRIPTION TheFLM5964-4FisapowerGaAsFETthatisinternallymatchedforstandardcommunicationbandstoprovideoptimumpowerandgainina50ohmsystem. Eudyna’sstringentQualityAssuranceProgramassuresthehighestreliabilityandconsistentperformance. FEATURES ?HighOu | ETC1List of Unclassifed Manufacturers etc未分類制造商未分類制造商 | ETC1 | ||
C-BANDPOWERGAASMESFET DESCRIPTION TheNEZC-BandseriesofhighperformancemicrowavepowerGaAsMESFETsprovideshighgainandlowintermodulationdistortionoverstandardanddigitalcommunicationbandsfrom3to8GHz. FEATURES ●INTERNALLYMATCHED(IN/OUT) ●HIGHPout(4W,8W,&15W) ●CLASSAOPERATION | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
C-BANDPOWERGAASMESFET DESCRIPTION TheNEZC-BandseriesofhighperformancemicrowavepowerGaAsMESFETsprovideshighgainandlowintermodulationdistortionoverstandardanddigitalcommunicationbandsfrom3to8GHz. FEATURES ●INTERNALLYMATCHED(IN/OUT) ●HIGHPout(4W,8W,&15W) ●CLASSAOPERATION | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
4W/8WC-BANDPOWERGaAsFETN-CHANNELGaAsMESFET DESCRIPTION TheNEZSeriesofmicrowavepowerGaAsFETsofferhighoutputpower,highgainandhighefficiencyatC-bandformicrowaveandsatellitecommunications.Internalinputandoutputcircuitsmatchedto50?are designedtoprovidegoodflatnessofgainandoutputpowerinallocated | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
4W/8WC-BANDPOWERGaAsFETN-CHANNELGaAsMESFET DESCRIPTION TheNEZSeriesofmicrowavepowerGaAsFETsofferhighoutputpower,highgainandhighefficiencyatC-bandformicrowaveandsatellitecommunications.Internalinputandoutputcircuitsmatchedto50?are designedtoprovidegoodflatnessofgainandoutputpowerinallocated | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
MICROWAVEPOWERGAASFET | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
MICROWAVEPOWERGaAsFET | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA |
詳細參數(shù)
- 型號:
TIM5964-4SL
- 制造商:
Toshiba America Electronic Components
- 功能描述:
TRANSISTOR,GAAS FET INTERNALLY MATCHED,6GHZ,23W - Trays
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
TOSHIBA |
21+ |
標(biāo)準封裝 |
50 |
進口原裝,訂貨渠道! |
詢價 | ||
TOSHIBA |
2022 |
66 |
原廠原裝正品,價格超越代理 |
詢價 | |||
TOSHIBA/東芝 |
23+ |
Description |
1200 |
全新原裝現(xiàn)貨,價格優(yōu)勢 |
詢價 | ||
TOSHIBA/東芝 |
24+ |
123 |
現(xiàn)貨供應(yīng) |
詢價 | |||
TOSHIBA |
23+ |
高頻管 |
450 |
專營高頻管模塊,全新原裝! |
詢價 | ||
TOSHIBA/東芝 |
23+ |
TO-59 |
8510 |
原裝正品代理渠道價格優(yōu)勢 |
詢價 | ||
TOSHIBA/東芝 |
2021+ |
3000 |
十年專營原裝現(xiàn)貨,假一賠十 |
詢價 | |||
TOSHIBA東芝 |
24+23+ |
12580 |
16年現(xiàn)貨庫存供應(yīng)商終端BOM表可配單提供樣品 |
詢價 | |||
TOSHIBA(東芝) |
23+ |
NA/ |
8735 |
原廠直銷,現(xiàn)貨供應(yīng),賬期支持! |
詢價 | ||
TOSHIBA |
2308+ |
原廠原包 |
6850 |
十年專業(yè)專注 優(yōu)勢渠道商正品保證 |
詢價 |
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