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IRF7413

PowerMOSFET(Vdss=30V,Id=12A)

SMPSMOSFET Benefits ?LowGatetoDrainChargetoReduce SwitchingLosses ?FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ?FullyCharacterizedAvalancheVoltage andCurrent Applications ?HighfrequencyDC-DCconverters

IRF

International Rectifier

IRF7413

MOSFET

Application GenerationVTechnology UltraLowOn-Resistance N-ChannelMosfet SurfaceMount AvailableinTape&Reel Dynamicdv/dtRating FastSwitching 100RgTested Lead-Free Features VDS(V)=30V RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

IRF7413A

PowerMOSFET(Vdss=30V,Rds(on)=0.0135ohm)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF7413GPBF

UltraLowOn-Resistance

IRF

International Rectifier

IRF7413GTRPBF

GenerationVTechnology

IRF

International Rectifier

IRF7413PBF

ULTARLOWONRESISTANCE

IRF

International Rectifier

IRF7413PBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF7413QPBF

HEXFETPowerMOSFET

Description TheseHEXFET?PowerMOSFETsinSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveaval

IRF

International Rectifier

IRF7413TR

MOSFET

Application GenerationVTechnology UltraLowOn-Resistance N-ChannelMosfet SurfaceMount AvailableinTape&Reel Dynamicdv/dtRating FastSwitching 100RgTested Lead-Free Features VDS(V)=30V RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

IRF7413TR

GenerationVTechnology

GenerationVTechnology UltraLowOn-Resistance N-ChannelMosfet SurfaceMount AvailableinTape&Reel Dynamicdv/dtRating FastSwitching 100RgTested Lead-Free Application Features VDS(V)=30V RDS(ON)12m(VGS=10V) RDS(ON)17m(VGS=4.5V)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司

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TL
24+
SMD
2500
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TL
24+
SMD-8
7500
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50000
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TOSHIBA/東芝
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DIP6
50000
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TOSHIBA/東芝
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NA/
3639
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TOSHIBA/東芝
24+
DIP6
60000
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TI
24+
DIP8
3500
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TI
2024+
DIP8
50000
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ST
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SOP8
2652
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336
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更多TL7413N供應(yīng)商 更新時(shí)間2025-5-5 16:00:00

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