首頁(yè) >TLE4905GINTR>規(guī)格書列表
零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
-60VP-ChannelMOSFET Description Featuresofthisdesignarea150°Cjunctionoperating temperature,fastswitchingspeedandimproved repetitiveavalancherating.Thesefeatures combinetomakethisdesignanextremelyefficient andreliabledeviceforuseinawidevarietyofother applications. Features | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導(dǎo)體 | EVVOSEMI | ||
PowerMOSFET(Vdss=-55V,Rds(on)=0.02ohm,Id=-74A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi | IRF International Rectifier | IRF | ||
iscP-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
AdvancedProcessTechnology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
HEXFETPowerMOSFET VDSS=-55V RDS(on)=20m? ID=-42A Description Featuresofthisdesignarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombinetomakethisdesignanextremelyefficientandreliabledeviceforuseinawidevarietyo | IRF International Rectifier | IRF | ||
-55VP-ChannelMOSFET Features *VDS(V)=-55V *ID=-74A(VGS=-10V) *RDS(ON) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司 | UMW | ||
HEXFETPowerMOSFET | IRF International Rectifier | IRF | ||
P-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
PowerMOSFET(Vdss=-55V,Rds(on)=0.02ohm,Id=-74A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
英飛凌 |
22+ |
NA |
500000 |
萬三科技,秉承原裝,購(gòu)芯無憂 |
詢價(jià) | ||
INFINEON |
23+ |
SOT-89 |
8000 |
只做原裝現(xiàn)貨 |
詢價(jià) | ||
Infineon |
22+ |
NA |
2118 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價(jià) | ||
Infineon |
21+ |
標(biāo)準(zhǔn)封裝 |
3500 |
進(jìn)口原裝,訂貨渠道! |
詢價(jià) | ||
Infineon Technologies |
24+ |
原裝 |
5000 |
原裝正品,提供BOM配單服務(wù) |
詢價(jià) | ||
INFINEON |
24+ |
con |
35960 |
查現(xiàn)貨到京北通宇商城 |
詢價(jià) | ||
INFINEON/英飛凌 |
21+ |
SOT-89 |
9852 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價(jià) | ||
INFINEON |
24+ |
SSOP |
16000 |
詢價(jià) | |||
Infineon |
13+ |
TO-92 |
151258 |
原裝分銷 |
詢價(jià) | ||
INFINEON |
11+ |
P-SSO-3-2 |
8000 |
全新原裝,絕對(duì)正品現(xiàn)貨供應(yīng) |
詢價(jià) |
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