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TLHG5200

HighEfficiencyLED,5mmTintedNon-DiffusedPackage

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

TLHG5200

HighEfficiencyLED,?5mmTintedNon-DiffusedPackage

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

TLHR5200

HighEfficiencyLED,?5mmTintedNon-DiffusedPackage

DESCRIPTION TheTLHR5200wasdevelopedforstandardapplicationslike generalindicatingandlightingpurposes. Itishousedina5mmtintednon-diffusedplasticpackage. Thesmallviewingangleofthesedevicesprovidesahigh brightness. AllLEDsarecategorizedinluminousintensitygrou

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

TLHR5200

HighEfficiencyLED,5mmTintedNon-DiffusedPackage

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

TLHR5200

HighEfficiencyLED,5mmTintedNon-DiffusedPackage

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

TLHR5200

HighEfficiencyLED,?5mmTintedNon-DiffusedPackage

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

TLHY5200

HighEfficiencyLED,?5mmTintedNon-DiffusedPackage

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

TLHY5200

HighEfficiencyLED,5mmTintedNon-DiffusedPackage

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

TPH5200FNH

MOSFETsSiliconN-channelMOS

Applications ?High-EfficiencyDC-DCConverters ?SwitchingVoltageRegulators Features (1)High-speedswitching (2)Smallgatecharge:QSW=8.2nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=44mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=250V) (5

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPH5200FNH

N-ChannelMOSFET

FEATURES ·DrainCurrent-ID=26A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=52mΩ(Max)@VGS=10V APPLICATIONS ·SwitchingVoltageRegulators ·DC-DCconverter

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

TPW5200FNH

MOSFETsSiliconN-channelMOS

Applications ?High-EfficiencyDC-DCConverters ?SwitchingVoltageRegulators Features (1)High-speedswitching (2)Smallgatecharge:QSW=8.2nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=44mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=250V) (5

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TQS5200

SPDTSwitchforSingle-bandandDual-band,802.11a/b/gSystems

GeneralDescription TheTQS5200isahighpower,single-poledouble-throwswitchconfiguredforTX-RXorAntennaDiversityswitchingapplicationsfortheWLANmarket.Thedeviceexhibitsindustry-leadinginsertionloss,isolationandpowerhandling. ProductFeatures ?IntegratedSPDTSwitchfor

TriQuint

TriQuint Semiconductor

TQS5200

802.11a/b/gSingle/Dual-bandSPDTSwitch

TriQuint

TriQuint Semiconductor

TQS5200-PCB

802.11a/b/gSingle/Dual-bandSPDTSwitch

TriQuint

TriQuint Semiconductor

TSFF5200

HighSpeedIREmittingDiodein?5mm(T–13/4)Package

DESCRIPTION TSFF5210isaninfrared,870nmemittingdiodeinGaAlAsdoublehetero(DH)technologywithhighradiantpowerandhighspeed,moldedinaclear,untintedplasticpackage. FEATURES ?Packagetype:leaded ?Packageform:T-13/4 ?Dimensions(inmm):?5 ?Leadswithstand-off ?

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

TSHA5200

InfraredEmittingDiode,875nm,GaAlAs

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

TSHA5200

InfraredEmittingDiode

Description TheTSHA520.seriesarehighefficiencyinfraredemittingdiodesinGaAlAsonGaAlAstechnology,moldedinaclear,untintedplasticpackage. IncomparisonwiththestandardGaAsonGaAstechnologythesehighintensityemittersfeatureabout70radiantpowerimprovement. Features

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

TSHA5200

InfraredEmittingDiode,875nm,GaAlAs

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

TSHA5200

InfraredEmittingDiode,RoHSCompliant,875nm,GaAlAs

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

TSHA5200

GaAlAsInfraredEmittingDiodesin?5mm(T–13/4)Package

Description TheTSHA520.seriesarehighefficiencyinfraredemittingdiodesinGaAlAsonGaAlAstechnology,moldedinaclear,untintedplasticpackage. IncomparisonwiththestandardGaAsonGaAstechnologythesehighintensityemittersfeatureabout70radiantpowerimprovement. Features

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

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SIEMENS
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33
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全新原裝現(xiàn)貨假一賠十
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INFINEON/英飛凌
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更多TLE5200G供應(yīng)商 更新時(shí)間2024-12-22 15:30:00