TLP151中文資料東芝數(shù)據(jù)手冊(cè)PDF規(guī)格書

Industrial Inverter

MOS FET / IGBT Gate Driver

IH(Induction Heating)

Operate at high ambient temperatures up to 110°C

The Toshiba TLP151 consists of an infrared LED and integrated high gain,

high-speed photodetectors. The TLP151 is housed in the SO6 package.

The photodetector has an internal Faraday shield that provides a guaranteed

common-mode transient immunity of ±15 kV/μs. TLP151 is suitable for direct

gate driving circuit for IGBTs or power MOSFETs.

? Buffer logic type (Totem pole output)

? Package type: SO6

? Peak Output Current : IOP = ±0.6 A (max)

? Guaranteed performance over temperature: -40 to 110°C

? Power supply voltage: 10 to 30 V

? Threshold Input Current: IFLH = 5.0 mA (max)

? Propagation delay time : tpLH / tpHL = 700 ns (max)

? Common mode transient immunity : ±15 kV/μs （min）

? Isolation voltage : 3750 Vrms (min)

? UL-recognized : UL 1577, File No.E67349

? cUL-recognized : CSA Component Acceptance Service No.5A

File No.E67349

? VDE-approved ：EN 60747-5-5 ,EN 62368-1 (Note 1)