TLP250INV中文資料東芝數(shù)據(jù)手冊PDF規(guī)格書

TRANSISTOR INVERTER

INVERTERS FOR AIR CONDITIONER

IGBT GATE DRIVE

POWER MOS FET GATE DRIVE

The TOSHIBA TLP250(INV) consists of a GaAlAs light emitting diode and a integrated photodetector.

This unit is 8-lead DIP.

TLP250(INV) is suitable for gate driving circuit of IGBT or power MOS FET.

● Input Threshold Current : IF=5mA(MAX)

● Supply Current(ICC) : 11mA(MAX)

● Supply Voltage(VCC) : 10~35V

● Output Current(IO) : ±2.0A(MAX)

● Switching Time(tpLH/tpHL) : 0.5μs(MAX)

● Isolation Voltage : 2500Vrms

● UL Recognized : UL1577,File No.E67349

● Option(D4)

VDE Approved : DIN VDE0884/06.92 Certificate No.76823

Maximum Operating Insulation Voltage : 630VPK

Highest Permissible Over Voltage : 4000VPK

(Note):When a VDE0884 approved type is needed,

Please designate the “Option(D4)”

● Creepage Distance : 6.4mm(MIN)

Clearance : 6.4mm(MIN)