TLP291GB中文資料東芝數(shù)據(jù)手冊PDF規(guī)格書

Power Supplies Programmable Controllers Hybrid ICs

TLP291 consists of photo transistor, optically coupled to a gallium arsenide infrared emitting diode. TLP291 is housed in the SO4 package, very small and thin coupler.

Since TLP291 is guaranteed wide operating temperature (Ta=-55 to 110 ?C) and high isolation voltage (3750Vrms), it’s suitable for high-density surface mounting applications such as small switching power supplies and programmable controllers.

● Collector-Emitter Voltage : 80 V (min)

● Current Transfer Ratio : 50 (min)

Rank GB : 100 (min)

● Isolation Voltage : 3750 Vrms (min)

● Operation temperature: -55 to 110 ?C

● UL recognized : UL1577, File No. E67349

● cUL approved : CSA Component Acceptance Service No.5A,

File No. 67349

● SEMKO aprroved:

EN 60065: 2002, Approved no. 1200315

EN 60950-1: 2001, EN 60335-1: 2002,

Approved no. 1200315

● BSI approved

: BS EN 60065: 2002, Approved no. 9036

: BS EN 60950-1: 2006, Approved no. 9037

● Option (V4)

VDE approved: EN 60747-5-5 Certificate, No. 40009347

Maximum operating insulation voltage: 707 Vpk

Highest permissible over-voltage: 6000 Vpk

(Note) When a EN 60747-5-5 approved type is needed,

please designate the “Option(V4)”

Construction Mechanical Rating

Creepage distance:5.0mm(min)

Clearance:5.0mm(min)

Insultion thickness:0.4mm(min)