TMUX7413FRRPR

TMUX741xF ±60 V Fault-Protected, 1:1 (SPST), 4-Channel Switches With Latch-Up Immunity and 1.8-V Logic

1Features ?Widesupplyvoltagerange: –Singlesupply:8Vto44V –Dualsupply:±5Vto±22V ?Integratedfaultprotection: –Overvoltageprotection,sourcetosuppliesor sourcetodrain:±85V –Overvoltageprotection:±60V –Powered-offprotection:±60V –Interruptflagstoindi

7413

PowerMOSFET(Vdss=30V,Id=12A)

SMPSMOSFET Benefits ?LowGatetoDrainChargetoReduce SwitchingLosses ?FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ?FullyCharacterizedAvalancheVoltage andCurrent Applications ?HighfrequencyDC-DCconverters

7413SYZBE

7000SeriesMiniatureToggleSwitches

7413WS

MachFlex?,61GC#18StrBC,PVC-NYLIns,OATCBrd,TPEJkt,1000VWTTC,600VTC-ER

ProductDescription MachFlex?forHighFlex,6+1GConductor18AWG(16x30)BareCopper,PVC-NYLInsulation,OverallTinnedCopperBraid(85)Shield,TPEOuterJacket, 1000VWTTC,600VTC-ER

AM7413P

P-Channel100-V(D-S)MOSFET

AO7413

20VP-ChannelMOSFET

AO7413

P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAO7413usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatecharge,andoperationwithgatevoltagesaslowas1.8V,inthesmallSOT323footprint.Itcanbeusedforawidevarietyofapplications,includingloadswitching,lowcurrentinvertersandlow

AO7413L

P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAO7413usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatecharge,andoperationwithgatevoltagesaslowas1.8V,inthesmallSOT323footprint.Itcanbeusedforawidevarietyofapplications,includingloadswitching,lowcurrentinvertersandlow

HD7413

TTLHD74/HD74SSeries

IRF7413

N-ChannelMOSFET

■Features ●VDS(V)=30V ●ID=12A(VGS=10V) ●RDS(ON)

IRF7413

PowerMOSFET(Vdss=30V,Id=12A)

SMPSMOSFET Benefits ?LowGatetoDrainChargetoReduce SwitchingLosses ?FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ?FullyCharacterizedAvalancheVoltage andCurrent Applications ?HighfrequencyDC-DCconverters

IRF7413

GenerationVTechnology

GenerationVTechnology UltraLowOn-Resistance N-ChannelMosfet SurfaceMount AvailableinTape&Reel Dynamicdv/dtRating FastSwitching 100RgTested Lead-Free Application Features VDS(V)=30V RDS(ON)12m(VGS=10V) RDS(ON)17m(VGS=4.5V)

IRF7413

MOSFET

Application GenerationVTechnology UltraLowOn-Resistance N-ChannelMosfet SurfaceMount AvailableinTape&Reel Dynamicdv/dtRating FastSwitching 100RgTested Lead-Free Features VDS(V)=30V RDS(ON)

IRF7413A

PowerMOSFET(Vdss=30V,Rds(on)=0.0135ohm)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF7413GPBF

UltraLowOn-Resistance

IRF7413GTRPBF

GenerationVTechnology

IRF7413PBF

ULTARLOWONRESISTANCE

IRF7413PBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF7413QPBF

HEXFETPowerMOSFET

Description TheseHEXFET?PowerMOSFETsinSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveaval

IRF7413TR

GenerationVTechnology

GenerationVTechnology UltraLowOn-Resistance N-ChannelMosfet SurfaceMount AvailableinTape&Reel Dynamicdv/dtRating FastSwitching 100RgTested Lead-Free Application Features VDS(V)=30V RDS(ON)12m(VGS=10V) RDS(ON)17m(VGS=4.5V)