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TN0104N3-G

N-Channel Enhancement-Mode Vertical DMOS FET

GeneralDescription Thislowthreshold,enhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-proven,silicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighin

SUTEX

Supertex, Inc

TN0104N3

N-ChannelEnhancement-ModeVerticalDMOSFETs

LowThresholdDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththe

SUTEX

Supertex, Inc

VN0104N3

N-ChannelEnhancement-Mode

N-ChannelEnhancement-ModeVerticalDMOSPowerFETs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

VN0104N3

N-ChannelEnhancement-ModeVerticalDMOSFET

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan

SUTEX

Supertex, Inc

VN0104N3-G

N-ChannelEnhancement-ModeVerticalDMOSFET

GeneralDescription Thisenhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-proven,silicongatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandthehighinputimpedanceandpos

SUTEX

Supertex, Inc

VP0104N3

P-ChannelEnhancement-Mode

P-ChannelEnhancement-ModeVerticalDMOSPowerFETs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

VP0104N3

P-ChannelEnhancement-ModeVerticalDMOSFETs

SUTEX

Supertex, Inc

VP0104N3

P-ChannelEnhancement-ModeVerticalDMOSFETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan

SUTEX

Supertex, Inc

VP0104N3-G

P-ChannelEnhancement-ModeVerticalDMOSFET

GeneralDescription TheVP0104low-thresholdEnhancement-mode (normally-off)transistorsuseaverticalDMOSstructure andawell-provensilicon-gatemanufacturingprocess. Thiscombinationproducesadevicewiththepower handlingcapabilitiesofbipolartransistorsandthehigh inputimped

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

VP0104N3-G

P-ChannelEnhancement-ModeVerticalDMOSFETs

GeneralDescription TheSupertexVP0104isanenhancement-mode(normallyoff)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andthehi

SUTEX

Supertex, Inc

詳細(xì)參數(shù)

  • 型號:

    TN0104N3-G

  • 功能描述:

    MOSFET 40V 1.8Ohm

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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Microchip Technology
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30000
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Microchip
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31500
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50000
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更多TN0104N3-G供應(yīng)商 更新時(shí)間2024-12-22 14:13:00