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TN0106N3

N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs

[TOPAZSEMICONDUCTOR] N-CHANNELENHANCEMENT-MODED-MOSPOWERFETs

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

TN0106N3

N-Channel Enhancement-Mode Vertical DMOS FETs

Features ■Lowthreshold—2.0Vmax. ■Highinputimpedance ■Lowinputcapacitance—50pFtypical ■Fastswitchingspeeds ■Lowonresistance ■Freefromsecondarybreakdown ■Lowinputandoutputleakage ■ComplementaryN-andP-channeldevices

SUTEX

Supertex, Inc

TN0106N3-G

N-Channel Enhancement-Mode Vertical DMOS FET

SUTEX

Supertex, Inc

VN0106N3

N-ChannelEnhancement-Mode

N-ChannelEnhancement-ModeVerticalDMOSPowerFETs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

VN0106N3

N-ChannelEnhancement-ModeVerticalDMOSFET

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan

SUTEX

Supertex, Inc

VN0106N3-G

N-ChannelEnhancement-ModeVerticalDMOSFET

GeneralDescription Thisenhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-proven,silicongatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandthehighinputimpedanceandpos

SUTEX

Supertex, Inc

VP0106N3

P-ChannelEnhancement-ModeVerticalDMOSFETs

SUTEX

Supertex, Inc

VP0106N3

P-ChannelEnhancement-ModeVerticalDMOSFETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan

SUTEX

Supertex, Inc

VP0106N3

P-ChannelEnhancement-Mode

P-ChannelEnhancement-ModeVerticalDMOSPowerFETs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

VP0106N3-G

P-ChannelEnhancement-ModeVerticalDMOSFET

GeneralDescription TheVP0106low-thresholdEnhancement-mode (normally-off)transistorsuseaverticalDMOSstructure andawell-provensilicon-gatemanufacturingprocess. Thiscombinationproducesadevicewiththepower handlingcapabilitiesofbipolartransistorsandthehigh inputimped

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

詳細參數(shù)

  • 型號：

    TN0106N3

  • 功能描述：

    MOSFET 60V 3Ohm

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
SUPERTEX
24+
TO-92
3700
詢價
SUPERTEX
23+
TO-92
1963
絕對現(xiàn)貨庫存
 詢價
SUPERTEXINC
23+
TO-92
30000
代理全新原裝現(xiàn)貨,價格優(yōu)勢
 詢價
SUPERTEXINC
21+
TO-92
12500
原裝現(xiàn)貨假一賠十
 詢價
SUPERTEXINC
23+
TO-92
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
TN0106N3
77
77
詢價
SUPERTEXINC
02+
TO-92
12500
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
SUPERTEXINC
TO-92
39900
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī)
 詢價
2023+
TO-92
3000
進口原裝現(xiàn)貨
 詢價
SUPERTEX
2023+
TO-92
3587
全新原廠原裝產品、公司現(xiàn)貨銷售
 詢價
更多TN0106N3供應商 更新時間2025-1-22 15:30:00

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