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TN2130ND中文資料SUTEX數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

TN2130ND
廠商型號(hào)

TN2130ND

功能描述

N-Channel Enhancement-Mode Vertical DMOS FETs

文件大小

454.42 Kbytes

頁(yè)面數(shù)量

4 頁(yè)

生產(chǎn)廠商 Supertex, Inc
企業(yè)簡(jiǎn)稱

SUTEX

中文名稱

Supertex, Inc官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-2-3 17:08:00

TN2130ND規(guī)格書(shū)詳情

Advanced DMOS Technology

These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.

Features

? Free from secondary breakdown

? Low power drive requirement

? Ease of paralleling

? Low CISS and fast switching speeds

? Excellent thermal stability

? Integral Source-Drain diode

? High input impedance and high gain

Applications

? Logic level interfaces – ideal for TTL and CMOS

? Solid state relays

? Battery operated systems

? Photo voltaic drives

? Analog switches

? General purpose line drivers

? Telecom switches

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