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TP0604N3-GP013中文資料SUTEX數(shù)據(jù)手冊PDF規(guī)格書

TP0604N3-GP013
廠商型號

TP0604N3-GP013

功能描述

P-Channel Enhancement-Mode Vertical DMOS FET

文件大小

697.33 Kbytes

頁面數(shù)量

5

生產(chǎn)廠商 Supertex, Inc
企業(yè)簡稱

SUTEX

中文名稱

Supertex, Inc官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-28 11:09:00

TP0604N3-GP013規(guī)格書詳情

General Description

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.

Features

?Lowthreshold (-2.4V max.)

?High input impedance

?Low input capacitance (95pF typical)

?Fast switching speeds

?Low on-resistance

?Free from secondary breakdown

?Low input and output leakage

Applications

?Logic level interfaces - ideal for TTL and CMOS

?Solid state relays

?Battery operated systems

?Photo voltaic drives

?Analog switches

?General purpose line drivers

?Telecom switches

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