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TP0620N3

P-Channel Enhancement-Mode Vertical DMOS FETs

SUTEX

Supertex, Inc

TP0620N3G

P-Channel Enhancement-Mode Vertical DMOS FET

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

TP0620N3-G

P-Channel Enhancement-Mode Vertical DMOS FET

SUTEX

Supertex, Inc

TP0620N3-GP002

P-Channel Enhancement-Mode Vertical DMOS FET

SUTEX

Supertex, Inc

TP0620N3-GP003

P-Channel Enhancement-Mode Vertical DMOS FET

SUTEX

Supertex, Inc

TP0620N3-GP005

P-Channel Enhancement-Mode Vertical DMOS FET

SUTEX

Supertex, Inc

TP0620N3-GP013

P-Channel Enhancement-Mode Vertical DMOS FET

SUTEX

Supertex, Inc

TP0620N3-GP014

P-Channel Enhancement-Mode Vertical DMOS FET

SUTEX

Supertex, Inc

TN0620N3

N-ChannelEnhancement-ModeVerticalDMOSFETs

GeneralDescription Thislowthreshold,enhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-proven,silicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsa

SUTEX

Supertex, Inc

TN0620N3-G

N-ChannelEnhancement-ModeVerticalDMOSFET

GeneralDescription Thislowthreshold,enhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-proven,silicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsa

SUTEX

Supertex, Inc

詳細(xì)參數(shù)

  • 型號:

    TP0620N3

  • 功能描述:

    MOSFET 200V 12Ohm

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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SUPERTEX
23+
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50000
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SUPERTEX
23+
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11200
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SUPERTEX
23+
NA/
11326
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SUPERTEX
24+
TO-92
6230
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Microchip
1940+
N/A
864
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SUPERTEX
22+
TO-92
20000
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MICROCHIP(美國微芯)
2112+
TO-92-3
31500
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SUPERTEXINC
21+
TO-92
402
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MICROCHIP
1809+
TO-92-3
3675
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MICROCHIP(美國微芯)
2021+
TO-92-3
499
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更多TP0620N3供應(yīng)商 更新時(shí)間2024-12-25 11:00:00