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TP65H050G4BS中文資料TRANSPHORM數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

TP65H050G4BS
廠商型號(hào)

TP65H050G4BS

功能描述

650V SuperGaN? FET in TO-263 (source tab)

文件大小

1.93686 Mbytes

頁(yè)面數(shù)量

15 頁(yè)

生產(chǎn)廠商 Transphorm
企業(yè)簡(jiǎn)稱

TRANSPHORM

中文名稱

Transphorm官網(wǎng)

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更新時(shí)間

2025-1-22 23:00:00

TP65H050G4BS規(guī)格書(shū)詳情

Description

The TP65H050G4BS 650V, 50 mΩ gallium nitride (GaN) FET

is a normally-off device using Transphorm’s Gen IV platform.

It combines a state-of-the-art high voltage GaN HEMT with a

low voltage silicon MOSFET to offer superior reliability and

performance.

The Gen IV SuperGaN? platform uses advanced epi and

patented design technologies to simplify manufacturability

while improving efficiency over silicon via lower gate charge,

output capacitance, crossover loss, and reverse recovery

charge.

Features

?? JEDEC qualified GaN technology

?? Dynamic RDS(on)eff production tested

?? Robust design, defined by

— Wide gate safety margin

— Transient over-voltage capability

?? Enhanced inrush current capability

?? Very low QRR

?? Reduced crossover loss

Applications

?? Datacom

?? Broad industrial

?? PV inverter

?? Servo motor

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2500
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1998
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472
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IOT
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