TP65H070G4LSGB-TR中文資料TRANSPHORM數(shù)據(jù)手冊PDF規(guī)格書

Description

The TP65H070G4LSGB 650V, 72mΩ Gallium Nitride (GaN)

FET is a normally-off device. It combines state-of-the-art high

voltage GaN HEMT and low voltage silicon MOSFET

technologies—offering superior reliability and performance.

The Gen IV SuperGaN? platform uses advanced epi and

patented design technologies to simplify manufacturability

while improving efficiency over silicon via lower gate charge,

output capacitance, crossover loss, and reverse recovery

charge

Features

? Gen IV technology

? JEDEC-qualified GaN technology

? Dynamic RDS(on)eff production tested

? Robust design, defined by

— Wide gate safety margin

— Transient over-voltage capability

? Very low QRR

? Reduced crossover loss

? RoHS compliant and Halogen-free packaging

Applications

? Datacom

? Broad industrial

? PV inverter

? Servo motor

? Consumer

? Computing