TPS628511

TPS62851x 2.7-V to 6-V, 0.5-A, 1-A, 2-A, and 3-A Step-Down Converters in a SOT583 Package

1Features ?FunctionalSafety-Capable –Documentationavailabletoaidfunctionalsafety systemdesign ?Inputvoltagerange:2.7Vto6V ?Outputvoltagefrom0.6Vto5.5V ?1feedbackvoltageaccuracy(fulltemperature range) ?TJ=–40°Cto+150°C ?Familyof0.5-A,1-A,2-A(conti

TPS628511

TPS62851x 2.7-V to 6-V, 0.5-A / 1-A / 2-A Step-Down Converter in SOT583 Package

TPS628511DRLR

Marking：1100；Package：SOT-5X3；TPS62851x 2.7-V to 6-V, 0.5-A, 1-A, 2-A, and 3-A Step-Down Converters in a SOT583 Package

1Features ?FunctionalSafety-Capable –Documentationavailabletoaidfunctionalsafety systemdesign ?Inputvoltagerange:2.7Vto6V ?Outputvoltagefrom0.6Vto5.5V ?1feedbackvoltageaccuracy(fulltemperature range) ?TJ=–40°Cto+150°C ?Familyof0.5-A,1-A,2-A(conti

TPS628511DRLR

TPS62851x 2.7-V to 6-V, 0.5-A / 1-A / 2-A Step-Down Converter in SOT583 Package

TPS628511DRLR

Package：SOT-583；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 功能：降壓 類(lèi)別：集成電路（IC） 穩(wěn)壓器 - DC-DC 開(kāi)關(guān)穩(wěn)壓器 描述：2.7-V TO 6-V, 1-A, FIXED-FREQUEN

TPS628511EVM-139

包裝：盒 類(lèi)別：開(kāi)發(fā)板，套件，編程器 評(píng)估板 - DC/DC 與 AC/DC（離線）SMPS 描述：2.7-V TO 6-V, 1-A STEP DOWN CONV

HM628511H

4MHighSpeedSRAM(512-kwordx8-bit)

Description TheHM628511HSeriesisa4-MbithighspeedstaticRAMorganized512-kword×8-bit.IthasrealizedhighspeedaccesstimebyemployingCMOSprocess(4-transistor+2-polyresistormemorycell)andhighspeedcircuitdesigningtechnology.Itismostappropriatefortheapplicationwhi

HM628511HC

4MHighSpeedSRAM(512-kwordx8-bit)

Description TheHM628511HCSeriesisa4-MbithighspeedstaticRAMorganized512-kword×8-bit.IthasrealizedhighspeedaccesstimebyemployingCMOSprocess(6-transistormemorycell)andhighspeedcircuitdesigningtechnology.Itismostappropriatefortheapplicationwhichrequireshigh

HM628511HCI

WideTemperatureRangeVersion4MHighSpeedSRAM(512-kword?8-bit)

HM628511HI

4MHighSpeedSRAM(512-kwordx8-bit)

Description TheHM628511HISeriesisa4-MbithighspeedstaticRAMorganized512-kword×8-bit.IthasrealizedhighspeedaccesstimebyemployingCMOSprocess(4-transistor+2-polyresistormemorycell)andhighspeedcircuitdesigningtechnology.Itismostappropriatefortheapplicationwh