序號(hào) 型號(hào) 極限工作電壓 最大電流允許值 最大耗散功率 放大倍數(shù) 最大工作頻率 制作材料
12N1232 60V0.1A0.4Wβ>141MHZSi-PNP
22N1232(A) 60V0.1A0.4Wβ>141MHZSi-PNP
32N1233 60V0.1A0.4Wβ>281MHZSi-PNP
42N1234 110V0.1A0.4Wβ>140.8MHZSi-PNP
52N1235 120V2A85W<1MHZ或未知Si-NPN
62N1238 15V0.1A1Wβ>141.2MHZSi-PNP
72N1239 15V0.1A1Wβ>281.2MHZSi-PNP
82N1252 30V1A0.6Wβ>15>40MHZSi-NPN
92N1252(A) 60V1A0.6Wβ>15>40MHZSi-NPN
102N1253 30V1A0.6Wβ>30>50MHZSi-NPN
112N1253(A) 60V1A0.6Wβ>30>50MHZSi-NPN
122N1254 30V0.1A0.275W<1MHZ或未知Si-PNP
132N1255 30V0.1A0.275W<1MHZ或未知Si-PNP
142N1256 40V0.1A0.275W<1MHZ或未知Si-PNP
152N1258 40V0.1A0.275W<1MHZ或未知Si-PNP
162N1257 40V0.1A0.275W<1MHZ或未知Si-PNP
172N1259 50V0.1A0.275W<1MHZ或未知Si-PNP
182N1260 120V2A85W<1MHZ或未知Si-NPN
192N1261(A) 80V3.5A34Wβ>20<1MHZ或未知Ge-PNP
202N1262(A) 80V3.5A34Wβ>30<1MHZ或未知Ge-PNP
212N1263(A) 80V3.5A34Wβ>45<1MHZ或未知Ge-PNP
222N1264 20V0.01A0.05W3MHZGe-PNP
232N1106 100V0.5A0.8W<1MHZ或未知Si-NPN
242N1107 16V0.005A0.03W40MHZGe-PNP
252N1108 16V0.005A0.003W35MHZGe-PNP
262N1109 16V0.005A0.03W35MHZGe-PNP
272N1110 16V0.005A0.03W35MHZGe-PNP
282N1111(A,B) 20V0.005A0.03W35MHZGe-PNP
292N1114 25V0.2A0.15W>7MHZGe-NPN
302N1115(A) 20V0.125A0.15W>5MHZGe-PNP