TRF0208-SP中文資料德州儀器數(shù)據(jù)手冊PDF規(guī)格書

1 Features

? Standard microcircuit drawing (SMD), 5962-24202

? Radiation:

– Total ionizing dose (TID)

? Radiation hardness assurance (RHA) up to

100krad (Si) TID

? Enhanced low dose rate sensitivity (ELDRS)

free process

? High dose rate radiation lot acceptance

testing (HDR RLAT) up to 100krad (Si) TID

– Single event effects (SEE)

? Single event latch-up (SEL) immune to

linear energy transfer (LET) of

75MeV-cm2/mg

? Single event transient (SET) characterized

to LET of 75MeV?cm2/mg

? Space-grade QMLP

– Lead-free construction

– Extended temperature range: –55°C to +125°C

? Excellent performance driving RF ADCs

? Fixed power gain of 16dB in single-ended-todifferential

mode

? Bandwidth: 11GHz, 3dB

? Gain flatness: 8GHz, 1dB

? OIP3: 36dBm (2GHz), 32dBm (6GHz)

? P1dB: 14.5dBm (2GHz), 11dBm (6GHz)

? NF: 6.8dB (2GHz), 6.8dB (6GHz)

? Gain and phase imbalance: ±0.3dB and ±3o

? Power-down feature

? Single-supply operation: 3.3V

? Active current: 138mA

2 Applications

? RF sampling or GSPS ADC driver

? Aerospace and defense

? Phased array radar

? Communications payload

? Radar imaging payload

3 Description

The TRF0208-SP is a very high performance

fully differential amplifier (FDA) optimized for radio

frequency (RF) applications. This device is excellent

for ac-coupled applications that require a singleended

to differential conversion when driving an

analog-to-digital converter (ADC) such as the

high-performance ADC12DJ5200-SP. The on-chip

matching components simplify printed circuit board

(PCB) implementation and provide the highest

performance over the usable bandwidth. The device

is fabricated using TI’s advanced complementary

BiCMOS process, and available in a space-saving

WQFN-FCRLF package.

The TRF0208-SP operates on a single-rail supply and

consumes about 138mA of active current. A powerdown

feature is available for power savings.