TS8510VB-SD-F中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書

DESCRIPTION

TS8510VB is a high power infrared, 855 nm surface emitting

diode in GaAlAs technology with high radiant power and

high speed. Polarity configuration is “n-up”.

FEATURES

? Package type: chip

? Package form: single chip

? Technology: surface emitter

? Dimensions chip (L x W x H in mm):

0.260 x 0.260 x 0.17

? Peak wavelength: ? = 855 nm

? Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912