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20N65

20A,650VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC20N65isanN-channelenhancementmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyisspecializedinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstand

UTCUnisonic Technologies

友順友順科技股份有限公司

20N65

20AN-ChannelPowerMOSFET

Features ●RDS(ON)=0.35Ω ●Ultralowgatecharge(Typical150nC) ●Lowreversetransfercapacitance(CRSS=typical36pF) ●Fastswitchingcapability ●Avalancheenergyspecified ●Improveddv/dtcapability,highruggedness Application ●Powerfactorcorrection（PFC） ●Switchedm

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

20N65A

20A650VN-channelenhancementmodefieldeffecttransistor

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風(fēng)微電子廣東佑風(fēng)微電子有限公司

20N65Y

20Amps,650VoltsN-CHANNELMOSFET

CHONGQINGChongqing Pingwei Enterprise co.,Ltd

重慶平偉實(shí)業(yè)重慶平偉實(shí)業(yè)股份有限公司

AM20N65

MOSFET650V,20AN-CHANNEL

FEATURE ?ProprietaryNewPlanarTechnology ?RDS(ON),typ.typ.=0.38?@VGS=10V ?LowGateChargeMinimizeSwitchingLoss ?FastRecoveryBodyDiode DESCRIPTION TheAM20N65isavailableinTO220andTO220F Packages. APPLICATIONS ?Adaptor ?TVMainPower ?SMPSPowerSupply ?LCDPanel

AITSEMIAiT Semiconductor Inc.

創(chuàng)瑞科技AiT創(chuàng)瑞科技

CEB20N65S

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB20N65SA

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB20N65SF

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. Fastreverserecoverytime. Drivecircuitscanbesimple.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CECS20N65LN

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V,19A,RDS(ON)=180mW@VGS=10V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CECS20N65SA

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V,19A,RDS(ON)=180mW@VGS=10V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

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23+
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50000
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TRUESEMI
22+
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50000
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800
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23+
NA/
6280
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11000
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Truesemi(信安)
23+
TO-3P-3
249
三極管/MOS管/晶體管 > 場(chǎng)效應(yīng)管(MOSFET)
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TOS
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ZIP-5
1100
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TOSHIBA
10+
ZIP-5
7800
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更多TSA20N65MR供應(yīng)商 更新時(shí)間2025-3-14 11:00:00

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