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FQL40N50

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQL40N50

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQL40N50F

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQL40N50F

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=40A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.11Ω(Max)@VGS=10V APPLICATIONS ·SwitchedModePowerSupplies ·FPC ·ElectronicLampBallasts

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFPS40N50L

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFPS40N50L

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFPS40N50L

PowerMOSFET(Vdss=500V,Rds(on)typ.=0.087ohm,Id=46A)

Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,AvalancheandDynamicdv/dt Ruggedness ●FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ●LowTrrandSoftDiodeRecovery ●HighPerformanceOptimisedAnti-parallelDiode Applications

IRF

International Rectifier

IRFPS40N50L

PowerMOSFET

FEATURES ?SuperfastBodyDiodeEliminatestheNeedfor ??ExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimplerDrive ??Requirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoise ??Immunity ?Compliant

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFPS40N50LPBF

HEXFET?PowerMOSFET

IRF

International Rectifier

IRFPS40N50LPBF

PowerMOSFET

FEATURES ?SuperfastBodyDiodeEliminatestheNeedfor ??ExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimplerDrive ??Requirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoise ??Immunity ?Compliant

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IXFH40N50Q

HiPerFETPowerMOSFETsQ-Class

IXYS

IXYS Corporation

IXFH40N50Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=40A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=140mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFK40N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=40A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.16Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFT40N50Q

HiPerFETPowerMOSFETsQ-Class

IXYS

IXYS Corporation

IXTQ40N50Q

HighCurrentPowerMOSFETQ-Class

IXYS

IXYS Corporation

IXTQ40N50Q

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SIHFPS40N50L

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SiHFPS40N50L

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFPS40N50L

PowerMOSFET

FEATURES ?SuperfastBodyDiodeEliminatestheNeedfor ??ExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimplerDrive ??Requirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoise ??Immunity ?Compliant

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

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更多TSD40N50DV供應(yīng)商 更新時(shí)間2025-1-13 20:17:00