TSG65N110CE中文資料臺灣半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

FEATURES

● 650 V enhancement mode power transistor

● Bottom-cooled, 8x8 mm PDFN package

● RDS(on)(Typ) = 78 mΩ

● IDSmax,DC = 18 A / IDSmax,Pulse = 35 A

● Simple gate drive requirements (0 V to 6 V)

● Transient tolerant gate drive (-20 V / +10 V)

● High switching frequency (> 1 MHz)

● Fast and controllable fall and rise times

● Reverse conduction capability

● Zero reverse recovery loss

● Source Sense (SS) pin for optimized gate drive

● ROHS Compliant

● Halogen-free

APPLICATIONS

● Consumer and Industrial Power Supplies

● Power Adapters

● LED Lighting Drivers

● Fast Battery Charging

● Power Factor Correction

● Appliance and Industrial Motor Drives

● Wireless Power Transfer