TSG65N195CE中文資料臺灣半導體數據手冊PDF規(guī)格書

FEATURES

● 650 V enhancement mode power transistor

● 850 V transient drain-to-source voltage

● Bottom-cooled 8x8 mm PDFN package

● RDS(on)(Typ) = 150 mΩ

● DS(max) = 11 A / IDS(Max pulse) = 19A

● Ultra-low FOM

● Simple gate drive requirements (0 V to 6 V)

● Transient tolerant gate drive (-20 V / +10 V)

● High switching frequency (> 1 MHz)

● Fast and controllable fall and rise times

● Reverse conduction capability

● Zero reverse recovery loss

● Source Sense (SS) pin for optimized gate drive

● ROHS Compliant

● Halogen-free

APPLICATIONS

● Power Adapters

● LED Lighting Drivers

● Fast Battery Charging

● Power Factor Correction

● Appliance Motor Drives

● Wireless Power Transfer

● Industrial Power Supplies