TSHG5410_V02中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書

DESCRIPTION

TSHG5410 is an infrared, 850 nm emitting diode in GaAlAs

double hetero (DH) technology with high radiant power and

high speed, molded in a clear, untinted plastic package.

FEATURES

? Package type: leaded

? Package form: T-1?

? Dimensions (in mm): ? 5

? Leads with stand-off

? Peak wavelength: λp = 850 nm

? High reliability

? High radiant power

? High radiant intensity

? Angle of half intensity: ? = ± 18°

? Low forward voltage

? Suitable for high pulse current operation

? High modulation bandwidth: fc = 18 MHz

? Good spectral matching with CMOS cameras

? Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

Note

** Please see document “Vishay Material Category Policy”:

www.vishay.com/doc?99902