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TSM1N80SCTB0中文資料臺灣半導體數(shù)據(jù)手冊PDF規(guī)格書

TSM1N80SCTB0
廠商型號

TSM1N80SCTB0

功能描述

800V N-Channel MOSFET

文件大小

303.86 Kbytes

頁面數(shù)量

9

生產(chǎn)廠商 Taiwan Semiconductor Company, Ltd
企業(yè)簡稱

TSC臺灣半導體

中文名稱

臺灣半導體股份有限公司官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-2-9 9:06:00

TSM1N80SCTB0規(guī)格書詳情

General Description

The TSM1N80 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.

Features

● RDS(ON)=18?(Typ.) @ VGS=10V, ID=0.15A

● Low gate charge @ 5nC (Typ.)

● Low Crss @ 2.7pF (Typ.)

● Fast switching

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
24+
N/A
57000
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7500
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